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Short Communication | Open Access

AgNbO3 antiferroelectric film with high energy storage performance

Yanle Zhanga,1, Xiaobo Lia,1, Jianmin Songb, Suwei Zhangc, Jing Wangd, Xiuhong Daia, Baoting Liua, Guoyi Donga,( ), Lei Zhaoa,( )
Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
College of Science, Hebei Agricultural University, Baoding, 071001, China
Center for Advanced Measurement Science, National Institute of Metrology, Beijing, 100029, China
State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China

1 These authors contributed equally.

Peer review under responsibility of The Chinese Ceramic Society.

Show Author Information

Graphical Abstract

· Lead-free AgNbO3 epitaxial thin film is fabricated by pulsed laser deposition.

Abstract

Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates. However, most of the AgNbO3 based ceramics suffers from low dielectric breakdown strength (Eb). The limitation of low Eb is broken to some extent in this work. Here, AgNbO3 epitaxial films were fabricated by pulsed laser deposition, which possess high Eb of 624 kV/cm. The (001)AgNbO3 epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300 kV/cm. A recoverable energy density of 5.8 J/cm3 and an energy efficiency of 55.8% are obtained at 600 kV/cm, which demonstrates the great promise of the AgNbO3 film for energy storage applications.

Keywords

FilmAntiferroelectricAgNbO3Energy storage performance

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Journal of Materiomics
Volume 7 Issue 6,
November 2021
Pages 1294-1300
DOI: 10.1016/j.jmat.2021.02.018
Cite this article:
Zhang Y, Li X, Song J, et al. AgNbO3 antiferroelectric film with high energy storage performance. Journal of Materiomics, 2021, 7(6): 1294-1300. https://doi.org/10.1016/j.jmat.2021.02.018

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Received: 11 January 2021
Revised: 25 February 2021
Accepted: 27 February 2021
Published: 04 March 2021
© 2021 The Chinese Ceramic Society.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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