Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO<sub>3</sub> thin films

Dongfeng Zheng; Guo Tian; Yadong Wang; Wenda Yang; Luyong Zhang; Zoufei Chen; Zhen Fan; Deyang Chen; Zhipeng Hou; Xingsen Gao; Qiliang Li; Jun-Ming Liu

doi:10.1016/j.jmat.2021.10.003

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Research paper | Open Access

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO₃ thin films

Dongfeng Zheng^{^a^,^b}, Guo Tian^{^a}(), Yadong Wang^{^a}, Wenda Yang^{^a}, Luyong Zhang^{^a}, Zoufei Chen^{^a}, Zhen Fan^{^a}, Deyang Chen^{^a}, Zhipeng Hou^{^a}, Xingsen Gao^{^a}(), Qiliang Li^{^c}, Jun-Ming Liu^{^a^,^d}

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China

Songshan Lake Materials Laboratory Dongguan, Guangdong, 523808, China

Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia, 22030, USA

Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China

Peer review under responsibility of The Chinese Ceramic Society.

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Recently, there is a surge of research interest in configurable ferroelectric conductive domain walls which have been considered as possible fundamental building blocks for future electronic devices. In this work, by using piezoresponse force microscopy and conductive atomic force microscopy, we demonstrated the controlled manipulation of various conductive domain walls in epitaxial BiFeO₃ thin ﬁlms, e.g. neutral domain walls (NDW) and charged domain walls (CDWs). More interestingly, a specific type of nanoscale domains was also identified, which are surrounded by highly conductive circular CWDs. Similar nanoscale domains can also be controlled created and erasured by applying local field via conductive probe, which allow nondestructive current readout of different domain states with a large on/off resistance ratio up to 10². The results indicate the potential to design and develop high-density non-volatile ferroelectric memories by utilizing these programable conductive nanoscale domain walls.

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BiFeO₃ thin film Conductive domain wall Nanoscale domain High density memory

References

[1]

Aird A, Salje EKH. J Phys Condens Matter 1998;10: 377-L380.

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

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Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO₃ thin films