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Heterovalent doped (K0.48-0.07xNa0.52-0.43xBi0.5x)(Nb0.95-0.95xSb0.05-0.05xZrx)O3 ceramics were fabricated using conventional solid-state reaction. Then, the phase structures, dielectric, ferroelectric, and electric-strain properties were investigated. The compositions were tuned to be located at polymorphic phase boundary with increasing heterovalent Bi3+ and Zr4+ doping levels. A large strain of 0.19% was obtained at relatively low electric fields of 30 kV/cm in the composition of x = 0.04. The normalized large-signal d33* values were approximately 633 pm/V under a low driving electric field of 30 kV/cm, which were comparable or larger than the values reported for other lead-free families. The large strains obtained can be attributed to the formation of nanodomains and high-density domain walls, which were confirmed by the observations of domain morphology using transmission electron microscopy (TEM) technique. Excellent temperature stability of the strain properties of the x = 0.04 sample could be ascribed to the sluggish behaviour for the local structural heterogeneity in heterovalent-ion doped KNN ceramic. Theoretical simulations revealed that the Zr4+ produce the local stress at the BO6 octahedra and Bi3+ could yield off-centering of AO12 ployhedron due to the nature of Bi 6s lone pair electrons, which induced lattice expansion and local distortions in the sample. The local displacements are strongly anisotropic in heterovalent-ion doped system. It is believed that random local fields exist in these compositions owing to the eixstence of charge distribution. Such heterovalent doping of Bi3+ and Zr4+ could destory simultaneously the orthorhombic symmetry and the short-range ferroelecctric order, leading to the formation of complex nanodomains and local structral hetergenenity. Heterovalent doping may, therefore, offer a new avenve to design novel K0.5Na0.5NbO3 (KNN) -based materials for their mutifunctional applications.
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