AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
Powered by AMiner. Clicking this button will take you away from SciOpen.
Home Journal of Materiomics Article
Article Link
Cite
EndNote(RIS) BibTeX
Collect
Submit Manuscript
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article | Open Access

Stabilizing n-type cubic AgBiSe2 thermoelectric materials through alloying with PbS

Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China

Peer review under responsibility of The Chinese Ceramic Society.

Show Author Information

Graphical Abstract

Abstract

Phase transition generates rapid changes of transport parameters and poor mechanical property, and thus restricts the application of thermoelectric materials. AgBiSe2 exhibits cubic phase at above 580 K with high-symmetry structure and low lattice thermal conductivity, indicating the potentiality of high thermoelectric performances. In this work, the cubic structure of AgBiSe2 was achieved at ambient conditions by alloying with PbS, enhancing the configurational entropy at both cationic and anionic sites. The cubic structure was rather stable after several measurement cycles. Nb substitution at cationic sites effectively reduced band gap, and increased both carrier concentration and effective mass. All samples exhibited relatively low lattice thermal conductivity (0.68–0.34 W/(m·K)) in the temperature range of 300–773 K, due to the nanoscale inhomogeneity and the random distribution of multiple species at some atomic sites. A maximum zT of 0.65 at 773 K was obtained for (Ag0.99Nb0.01BiSe2)0.8(PbS)0.2 sample. The entropy-driven structural stabilization is a promising strategy to achieve stable structure for practical thermoelectric applications.

Keywords

ThermoelectricPhase transitionAgBiSe2Configurational entropy

References

[1]

Cao T, Shi X-L, Chen Z-G. Advances in the design and assembly of flexible thermoelectric device. Prog Mater Sci 2023;131:101003. https://doi.org/10.1016/j.pmatsci.2022.101003.
Crossref Google Scholar
[2]

Yan Q, Kanatzidis MG. High-performance thermoelectrics and challenges for practical devices. Nat Mater 2022;21(5):503–13. https://doi.org/10.1038/s41563-021-01109-w.
Crossref Google Scholar
[3]

Chen W-Y, Shi X-L, Zou J, Chen Z-G. Thermoelectric coolers for on-chip thermal management: materials, design, and optimization. Mater Sci Eng R Rep 2022;151:100700. https://doi.org/10.1016/j.mser.2022.100700.
Crossref Google Scholar
[4]

Wang G, Yang J, Zhao H. Mg3(Bi,Sb)2-based thermoelectric modules towards near-room temperature cooling and power generation. J Materiomics 2022;8(6):1218–21. https://doi.org/10.1016/j.jmat.2022.05.004.
Crossref Google Scholar
[5]

Zhu B, Liu X, Wang Q, Qiu Y, Shu Z, Guo Z, et al. Realizing record high performance in n-type Bi2Te3-based thermoelectric materials. Energy Environ Sci 2020;13(7):2106–14. https://doi.org/10.1039/D0EE01349H.
Crossref Google Scholar
[6]

Fu C, Zhu T, Pei Y, Xie H, Wang H, Snyder GJ, et al. High band degeneracy contributes to high thermoelectric performance in p-type half-Heusler compounds. Adv Energy Mater 2014;4(18):1400600. https://doi.org/10.1002/aenm.201400600.
Crossref Google Scholar
[7]

Ji W, Shi X-L, Liu W-D, Yuan H, Zheng K, Wan B, et al. Boosting the thermoelectric performance of n-type Bi2S3 by hierarchical structure manipulation and carrier density optimization. Nano Energy 2021;87:106171. https://doi.org/10.1016/j.nanoen.2021.106171.
Crossref Google Scholar
[8]

Ning S, Huang S, Zhang Z, Qi N, Jiang M, Chen Z, et al. Band convergence boosted high thermoelectric performance of Zintl compound Mg3Sb2 achieved by biaxial strains. J Materiomics 2022;8(5):1086–94. https://doi.org/10.1016/j.jmat.2022.02.001.
Crossref Google Scholar
[9]

Wu Y, Chen Z, Nan P, Xiong F, Lin S, Zhang X, et al. Lattice strain advances thermoelectrics. Joule 2019;3(5):1276–88. https://doi.org/10.1016/j.joule.2019.02.008.
Crossref Google Scholar
[10]

Zhao K, Zhu C, Zhu M, Chen H, Lei J, Ren Q, et al. Structural modularization of Cu2Te leading to high thermoelectric performance near the Mott-Ioffe-Regel limit. Adv Mater 2022;34(19):2108573. https://doi.org/10.1002/adma.202108573.
Crossref Google Scholar
[11]

Shi X-L, Liu W-D, Li M, Sun Q, Xu S-D, Du D, et al. A solvothermal synthetic environmental design for high-performance SnSe-based thermoelectric materials. Adv Energy Mater 2022;12(20):2200670. https://doi.org/10.1002/aenm.202200670.
Crossref Google Scholar
[12]

Yang D, Su X, Li J, Bai H, Wang S, Li Z, et al. Blocking ion migration stabilizes the high thermoelectric performance in Cu2Se composites. Adv Mater 2020;32(40):2003730. https://doi.org/10.1002/adma.202003730.
Crossref Google Scholar
[13]

Zhuang H-L, Pan Y, Sun F-H, Dong J, Pei J, Asfandiyar, et al. Thermoelectric Cu-doped (Bi,Sb)2Te3: performance enhancement and stability against high electric current pulse. Nano Energy 2019;60:857–65. https://doi.org/10.1016/j.nanoen.2019.04.021.
Crossref Google Scholar
[14]

Zheng Z-H, Shi X-L, Ao D-W, Liu W-D, Li M, Kou L-Z, et al. Harvesting waste heat with flexible Bi2Te3 thermoelectric thin film. Nat Sustain 2023;6(2):180–91. https://doi.org/10.1038/s41893-022-01003-6.
Crossref Google Scholar
[15]

Morelli DT, Jovovic V, Heremans JP. Intrinsically minimal thermal conductivity in cubic I-V-VI2 semiconductors. Phys Rev Lett 2008;101(3):035901. https://doi.org/10.1103/PhysRevLett.101.035901.
Crossref Google Scholar
[16]

Hong M, Chen Z-G, Yang L, Liao Z-M, Zou Y-C, Chen Y-H, et al. Achieving zT>2 in p-type AgSbTe2-xSex alloys via exploring the extra light valence band and introducing dense stacking faults. Adv Energy Mater 2018;8(9):1702333. https://doi.org/10.1002/aenm.201702333.
Crossref Google Scholar
[17]

Wu Y, Qiu P, Yu Y, Xiong Y, Deng T, Cojocaru-Mirédin O, et al. High-performance and stable AgSbTe2-based thermoelectric materials for near room temperature applications. J Materiomics 2022;8(6):1095–103. https://doi.org/10.1016/j.jmat.2022.07.005.
Crossref Google Scholar
[18]

Wei TR, Wu CF, Li F, Li JF. Low-cost and environmentally benign selenides as promising thermoelectric materials. J Materiomics 2018;4(4):304–20. https://doi.org/10.1016/j.jmat.2018.07.001.
Crossref Google Scholar
[19]

Jang H, Toriyama MY, Abbey S, Frimpong B, Male JP, Snyder GJ, et al. Suppressing charged cation antisites via Se vapor annealing enables p-type dopability in AgBiSe2–SnSe thermoelectrics. Adv Mater 2022;34(38):2204132. https://doi.org/10.1002/adma.202204132.
Crossref Google Scholar
[20]

Xiao C, Qin X, Zhang J, An R, Xu J, Li K, et al. High thermoelectric and reversible p-n-p conduction type switching integrated in dimetal chalcogenide. J Am Chem Soc 2012;134(44):18460–6. https://doi.org/10.1021/ja308936b.
Crossref Google Scholar
[21]

Roychowdhury S, Ghosh T, Arora R, Waghmare UV, Biswas K. Stabilizing n-type cubic GeSe by entropy-driven alloying of AgBiSe2: ultralow thermal conductivity and promising thermoelectric performance. Angew Chem Int Ed 2018;57(46):15167–71. https://doi.org/10.1002/anie.201809841.
Crossref Google Scholar
[22]

Chandra S, Arora R, Waghmare UV, Biswas K. Modulation of the electronic structure and thermoelectric properties of orthorhombic and cubic SnSe by AgBiSe2 alloying. Chem Sci 2021;12(39):13074–82. https://doi.org/10.1039/D1SC03696C.
Crossref Google Scholar
[23]

Guin SN, Banerjee S, Sanyal D, Pati SK, Biswas K. Nanoscale stabilization of nonequilibrium rock salt BiAgSeS: colloidal synthesis and temperature driven unusual phase transition. Chem Mater 2017;29(8):3769–77. https://doi.org/10.1021/acs.chemmater.7b00862.
Crossref Google Scholar
[24]

Mitra S, Berardan D. Influence of the temperature and composition on the crystal structure of the AgBiSe2-AgBiS2 system. Cryst Res Technol 2017;52(6):1700075. https://doi.org/10.1002/crat.201700075.
Crossref Google Scholar
[25]

Hu Y, Yuan S, Huo H, Xing J, Guo K, Yang X, et al. Stabilized cubic phase BiAgSe2-xSx with excellent thermoelectric properties via phase boundary engineering. J Mater Chem C 2021;9(21):6766–72. https://doi.org/10.1039/D1TC00760B.
Crossref Google Scholar
[26]

Xia Q, Ying P, Xia Y, Li X, Cui J. Regulation of electronic and phonon transports of AgBiSe2-based solid solutions by entropy engineering. Appl Phys Lett 2021;119(16):161901. https://doi.org/10.1063/5.0066033.
Crossref Google Scholar
[27]

Xia Q, Ying P, Han Z, Li X, Xu L, Cui J. Chemical composition engineering leading to the significant improvement in the thermoelectric performance of AgBiSe2-based n-type solid solutions. ACS Appl Energy Mater 2021;4(3):2899–907. https://doi.org/10.1021/acsaem.1c00275.
Crossref Google Scholar
[28]

Sudo K, Goto Y, Sogabe R, Hoshi K, Miura A, Moriyoshi C, et al. Doping-induced polymorph and carrier polarity changes in thermoelectric Ag(Bi,Sb)Se2 solid solution. Inorg Chem 2019;58(11):7628–33. https://doi.org/10.1021/acs.inorgchem.9b01038.
Crossref Google Scholar
[29]

Zhu H, Zhao T, Zhang B, An Z, Mao S, Wang G, et al. Entropy engineered cubic n-type AgBiSe2 alloy with high thermoelectric performance in fully extended operating temperature range. Adv Energy Mater 2021;11(5):2003304. https://doi.org/10.1002/aenm.202003304.
Crossref Google Scholar
[30]

Liu X-C, Pan M-Y. Structural phase transition and related thermoelectric properties in Sn doped AgBiSe2. Crystals 2021;11(9):1016. https://doi.org/10.3390/cryst11091016.
Crossref Google Scholar
[31]

Li S, Hou S, Xue W, Yin L, Liu Y, Wang X, et al. Manipulation of phase structure and Se vacancy to enhance the average thermoelectric performance of AgBiSe2. Mater Today Phys 2022;27:100837. https://doi.org/10.1016/j.mtphys.2022.100837.
Crossref Google Scholar
[32]

Zhao T, Zhu H, Zhang B, Zheng S, Li N, Wang G, et al. High thermoelectric performance of tellurium-free n-type AgBi1-xSbxSe2 with stable cubic structure enabled by entropy engineering. Acta Mater 2021;220:117291. https://doi.org/10.1016/j.actamat.2021.117291.
Crossref Google Scholar
[33]

Jiang B, Yu Y, Cui J, Liu X, Xie L, Liao J, et al. High-entropy-stabilized chalcogenides with high thermoelectric performance. Science 2021;371(6531):830–4. https://doi.org/10.1126/science.abe1292.
Crossref Google Scholar
[34]

Niu Y, Li S, Mao J, Yang C, Zhang Q, Zhang Q, et al. Suppressed phase transition and enhanced thermoelectric performance in iodine-doped AgCuTe. Nano Energy 2020;77:105297. https://doi.org/10.1016/j.nanoen.2020.105297.
Crossref Google Scholar
[35]

Bocher F, Culver SP, Peilstocker J, Weldert KS, Zeier WG. Vacancy and anti-site disorder scattering in AgBiSe2 thermoelectrics. Dalton Trans 2017;46(12):3906–14. https://doi.org/10.1039/c7dt00381a.
Crossref Google Scholar
[36]

Goto Y, Nishida A, Nishiate H, Murata M, Lee CH, Miura A, et al. Effect of Te substitution on crystal structure and transport properties of AgBiSe2 thermoelectric material. Dalton Trans 2018;47(8):2575–80. https://doi.org/10.1039/c7dt04821a.
Crossref Google Scholar
[37]

Guan Y, Huang Y, Wu D, Feng D, He M, He J. Enhanced thermoelectric performance realized in AgBiS2 composited AgBiSe2 through indium doping and mechanical alloying. Appl Phys Lett 2018;112(21):213905. https://doi.org/10.1063/1.5034388.
Crossref Google Scholar
[38]

Pan L, Berardan D, Dragoe N. High thermoelectric properties of n-type AgBiSe2. J Am Chem Soc 2013;135(13):4914–7. https://doi.org/10.1021/ja312474n.
Crossref Google Scholar
Journal of Materiomics
Volume 10 Issue 1,
January 2024
Pages 70-77
DOI: 10.1016/j.jmat.2023.04.008
Cite this article:
Zhang L, Shen W, Zhang Z, et al. Stabilizing n-type cubic AgBiSe2 thermoelectric materials through alloying with PbS. Journal of Materiomics, 2024, 10(1): 70-77. https://doi.org/10.1016/j.jmat.2023.04.008

197

Views

9

Crossref

7

Web of Science

7

Scopus

Altmetrics
Received: 23 January 2023
Revised: 15 April 2023
Accepted: 16 April 2023
Published: 24 May 2023
© 2023 The Authors.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
Return