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Research Article | Open Access

Biaxial versus uniaxial strain tuning of single-layer MoS2

Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), 28049, Madrid, Spain
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Abstract

Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would be more effective than uniaxial strain to tune the band structure of MoS2, a direct experimental verification is still missing in the literature. Here we implemented a simple experimental setup that allows to apply biaxial strain through the bending of a cruciform polymer substrate. We used the setup to study the effect of biaxial strain on the differential reflectance spectra of 12 single-layer MoS2 flakes finding a redshift of the excitonic features at a rate between −40 meV/% and −110 meV/% of biaxial tension. We also directly compare the effect of biaxial and uniaxial strain on the same single-layer MoS2 finding that the biaxial strain gauge factor is 2.3 times larger than the uniaxial strain one.

Keywords

2D materialsMoS2Strain engineeringbiaxial strainuniaxial strainreflectance spectra

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Nano Materials Science
Volume 4 Issue 1,
March 2022
Pages 44-51
DOI: 10.1016/j.nanoms.2021.03.001
Cite this article:
Carrascoso F, Frisenda R, Castellanos-Gomez A. Biaxial versus uniaxial strain tuning of single-layer MoS2. Nano Materials Science, 2022, 4(1): 44-51. https://doi.org/10.1016/j.nanoms.2021.03.001
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