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Topical Review | Open Access

Preparation of MXene-based hybrids and their application in neuromorphic devices

Zhuohao Xiao1,2Xiaodong Xiao1Ling Bing Kong3( )Hongbo Dong2Xiuying Li1Bin He3Shuangchen Ruan3Jianpang Zhai3Kun Zhou4Qin Huang5Liang Chu6 ( )
School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, Jiangxi, People’s Republic of China
School of Mechanical and Vehicle Engineering, Linyi University, Linyi 276000, Shandong, People’s Republic of China
College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, Guangdong, People’s Republic of China
School of Mechanical & Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
Ningbo Institute of Materials Engineering and Technology, Chinese Academy of Science, Ningbo 315201, Zhejiang, People’s Republic of China
Institute of Carbon Neutrality and New Energy & School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, People’s Republic of China
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Abstract

The traditional von Neumann computing architecture has relatively-low information processing speed and high power consumption, making it difficult to meet the computing needs of artificial intelligence (AI). Neuromorphic computing systems, with massively parallel computing capability and low power consumption, have been considered as an ideal option for data storage and AI computing in the future. Memristor, as the fourth basic electronic component besides resistance, capacitance and inductance, is one of the most competitive candidates for neuromorphic computing systems benefiting from the simple structure, continuously adjustable conductivity state, ultra-low power consumption, high switching speed and compatibility with existing CMOS technology. The memristors with applying MXene-based hybrids have attracted significant attention in recent years. Here, we introduce the latest progress in the synthesis of MXene-based hybrids and summarize their potential applications in memristor devices and neuromorphological intelligence. We explore the development trend of memristors constructed by combining MXenes with other functional materials and emphatically discuss the potential mechanism of MXenes-based memristor devices. Finally, the future prospects and directions of MXene-based memristors are briefly described.

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International Journal of Extreme Manufacturing
Article number: 022006
Cite this article:
Xiao Z, Xiao X, Kong LB, et al. Preparation of MXene-based hybrids and their application in neuromorphic devices. International Journal of Extreme Manufacturing, 2024, 6(2): 022006. https://doi.org/10.1088/2631-7990/ad1573

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Received: 12 July 2023
Revised: 10 September 2023
Accepted: 13 December 2023
Published: 12 January 2024
© 2024 The Author(s).

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