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Open Access

The Extended Linear-Drift Model of Memristor and Its Piecewise Linear Approximation

Tsinghua National Laboratory for Information Science and Technology and Department of Automation, Tsinghua University, Beijing 100084, China.
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Abstract

Memristor is introduced as the fourth basic circuit element. Memristor exhibits great potential for numerous applications, such as emulating synapse, while the mathematical model of the memristor is still an open subject. In the linear-drift model, the boundary condition of the device is not considered. This paper proposes an extended linear-drift model of the memristor. The extended linear-drift model keeps the linear characteristic and simplicity of the linear-drift model and considers the boundary condition of the device. A piecewise linear approximation model of the extended linear-drift model is given. Both models are suitable for describing the memristor.

Keywords

memristormathematical modelpiecewise linearhysteresis

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Tsinghua Science and Technology
Volume 19 Issue 3,
June 2014
Pages 307-313
DOI: 10.1109/TST.2014.6838202
Cite this article:
Mu X, Yu J, Wang S. The Extended Linear-Drift Model of Memristor and Its Piecewise Linear Approximation. Tsinghua Science and Technology, 2014, 19(3): 307-313. https://doi.org/10.1109/TST.2014.6838202

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Received: 02 July 2013
Revised: 26 March 2014
Accepted: 08 April 2014
Published: 18 June 2014
© The author(s) 2014
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