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Open Access

Carbon Nanotube Transistor with Short-Term Memory

Changqing Yin‡, Yuxing Li‡, Jiabin Wang, Xuefeng Wang, Yi Yang, Tian-Ling Ren( )
Institute of Microelectronics, Tsinghua University, Beijing 100084, China.
both the Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China.

‡ These authors contributed equally to this work.

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Abstract

Short-Term Memory (STM) is a primary capability of the human brain. Humans use STM to remember a small amount of information, like someone’s phone number, for a short period of time. Usually the duration of STM is less than 1 minute. Synapses, the connections between neurons, are of vital importance to memory in biological brains. For mimicking the memory function of synapses, Carbon Nanotube (CNT) networks based thin-film transistors with Electric Double Layers (EDL) at the dielectric/channel interface were researched in this work. A response characteristic of pre-synaptic potential pulses on the gate electrode of this CNT synaptic transistor was shown remarkably similar to Excitatory Post-Synaptic Current (EPSC) of biological synapses. Also a multi-level modulatable STM of CNT synaptic transistors was investigated. Post-synaptic current was shown with tunable peak values, on-off ratio, and relaxation time.

Keywords

carbon nanotubethin-film transistorsynapseexcitatory postsynaptic currentshort-term memory

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Tsinghua Science and Technology
Volume 21 Issue 4,
August 2016
Pages 442-448
DOI: 10.1109/TST.2016.7536722
Cite this article:
Yin C, Li Y, Wang J, et al. Carbon Nanotube Transistor with Short-Term Memory. Tsinghua Science and Technology, 2016, 21(4): 442-448. https://doi.org/10.1109/TST.2016.7536722

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Received: 08 December 2015
Accepted: 11 January 2016
Published: 11 August 2016
© The author(s) 2016
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