Effect of A-site Ce Doping on Electrical Properties of CaBi4Ti4O15 Bismuth Layered High-curie-temperature Piezoelectric Ceramics
Abstract
CexCa1-xBi4Ti4O15 (CCBT, x=0, 0.02, 0.04, 0.06, 0.08, 0.10) bismuth layered structured piezoelectric ceramics were prepared by using the conventional solid-state reaction method. The effect of A-site Ce doping on crystal structure, microstructure, dielectric and piezoelectric properties of the ceramics was investigated. All samples had bismuth layered structure with m=4 and Bi2Ti2O7 pyrochlore was present as the second phase when x≥0.08. Significantly enhanced piezoelectric coefficient (d33=17 pC·N-1) was achieved for the ceramic sample with x=0.06, over two times than that of CBT (d33=8 pC·N-1). Meanwhile, this ceramic also had high Curie temperature (Tc=773 ℃), low dielectric loss at room temperature (tanδ=0.7%) and high resistivity (ρ=6.4×107 Ω·cm @500 ℃). Furthermore, after annealing at 550 ℃, d33 still retained to be 14.2 pC·N-1, more than 80% of the room temperature value, indicating that it is ideal ceramic material for high temperature piezoelectric sensor applications.
Keywords
References
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