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Regular Paper | Open Access

Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter

Han Cao1, Puqi Ning2,3,4,5( ), Yunhao Huang2,3,4,5, Xuhui Wen2,3,4,5
Wuhan Second Ship Design and Research Institute, Wuhan 430205, China
Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
University of Chinese Academy of Sciences, Beijing 100049, China
Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing 100081, China
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Abstract

Compared to Si devices, the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material. This paper proposes a practical SiC MOSFET junction temperature monitoring method based on the on-state voltage Vds(on) measurement. In Section Ⅱ of the paper, the temperature sensitivity of the on-state voltage Vds(on) is characterized. The hardware of the measurement system is set up in Section Ⅲ, which consists of an On-state Voltage Measurement Circuit (OVMC), the sampling and isolation circuit. Next, a calibration method based on the self-heating of the SiC MOSFET chip is presented in Section Ⅳ. In the final Section, the junction temperature is monitored synchronously according to the calibration results. The proposed method is applied to a Buck converter and verified by both an Infrared Radiation (IR) camera and a Finite Element Analysis (FEA) tool.

Keywords

Junction temperatureSilicon Carbide (SiC) MOSFETTSEP

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CSEE Journal of Power and Energy Systems
Volume 10 Issue 4,
July 2024
Pages 1799-1807
DOI: 10.17775/CSEEJPES.2021.04840
Cite this article:
Cao H, Ning P, Huang Y, et al. Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter. CSEE Journal of Power and Energy Systems, 2024, 10(4): 1799-1807. https://doi.org/10.17775/CSEEJPES.2021.04840

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Received: 03 July 2021
Revised: 12 September 2021
Accepted: 31 October 2021
Published: 18 August 2022
© 2021 CSEE.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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