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Regular Paper | Open Access

Switching Behavior of Cascode GaN Under Influence of Gate Driver

Bin Luo, Guangzhao Luo( ), Sihai Li
School of Automation, Northwestern Polytechnical University, Xi'an 710072, China
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Abstract

With high-frequency, low power dissipation and high-efficiency characteristics, Gallium nitride (GaN) power devices are of significant benefit in designing high-speed motor drives, as they improve performance and reduce weight. However, due to the cascode structure, coupling with the parasitics in gate driver and power circuits, power converters based on cascode GaN are prone to overshoot and oscillate on switching waveforms, which may lead to serious EMC problems, or even device breakdown. The complicated structure of cascode GaN device makes the gate driver design comparatively complex. An analytical model of the switching process considering gate driver parameters is proposed in this article. The influence of gate driver parameters on switching behavior is investigated from the perspective of switching speed, waveform overshoot, and power loss. Trade-offs among overshoot, switching speed, and power loss are discussed; guidelines to design gate driver parameters are given.

Keywords

Gallium nitride (GaN)gate driveroscillation and overshootswitching characteristics

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CSEE Journal of Power and Energy Systems
Volume 10 Issue 4,
July 2024
Pages 1816-1833
DOI: 10.17775/CSEEJPES.2022.00580
Cite this article:
Luo B, Luo G, Li S. Switching Behavior of Cascode GaN Under Influence of Gate Driver. CSEE Journal of Power and Energy Systems, 2024, 10(4): 1816-1833. https://doi.org/10.17775/CSEEJPES.2022.00580

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Received: 24 March 2022
Revised: 21 August 2022
Accepted: 05 October 2022
Published: 08 September 2023
© 2022 CSEE.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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