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Ferroelectric (FE) thin films have recently attracted renewed interest in research due to their great potential for designing novel tunable electromagnetic devices such as large intelligent surfaces (LISs). However, the mechanism of how a polar structure in the FE thin films contributes to desired tunable performance, especially within the microwave frequency range, which is the most widely used frequency range of electromagnetics, has not been illustrated clearly. In this paper, we described several straightforward and cost-effective methods to fabricate and characterize Ba0.6Sr0.4TiO3 (BST) thin films at microwave frequencies. The prepared BST thin films here exhibit homogenous structures and great tunability (
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