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Due to chemical inertness of nickel and boron, the preparation of nickel borides and corresponding layered ternary transition metal borides Ni3ZnB2 (MAB phase) has always required high-temperature and/or high-pressure conditions. Yet, an innovative and efficient approach to preparing Ni3ZnB2 at only 600 ℃ and without applied pressure is presented in this study. It is discovered that by simply adjusting the temperature, a phase transition from Ni3ZnB2 to Ni4B3 with a layered structure could be induced. This transition between the binary-component and the ternary-component brings about significant variation in electromagnetic wave (EMW) shielding/absorption performance of prepared borides. For instance, Ni2B has good EMW shielding performance (42.54 dB in X band) and Ni3ZnB2 is of weak EMW shielding (13.43 dB in X band); Ni3ZnB2 has poor EMW absorption performance (−5 dB) while Ni4B3 has excellent EMW absorption performance (−45.19 dB) at a thickness of 2.7 mm with effective absorption bandwidth (10.4 GHz).
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