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Research Article | Open Access

Inkjet-printed carbon nanotube-MoS2 heterojunction p-n diodes

Fugu Tian1, Dingzhou Cui1, Mingrui Chen2, Zhiyuan Zhao2, Wenbo Chen1, Zikuan Wang1, Silvia Guadagnini3, Sarah Alsaggaf4,5, Shahad Albawardi4,5, Michelle L. Povinelli1,3, Moh R. Amer1,4,5(), Jia Grace Lu1,3, Chongwu Zhou1()
Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA 90089, USA
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
Department of Physics & Astronomy, Dornsife College of Letters, Arts, & Sciences, University of Southern California, Los Angeles, CA 90089, USA
Center of Excellence for Green Nanotechnologies, King Abdulaziz City for Science and Technology, Riyadh 12354, Saudi Arabia
Microelectronics and Semiconductor Institute, King Abdulaziz City for Science and Technology, Riyadh 12354, Saudi Arabia
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This paper presents the fabrication and characterization of inkjet-printed carbon nanotube (CNT) and MoS2 heterojunction p-n diodes, demonstrating their electrical and optoelectronic properties, including potential applications as photodetectors and high-frequency devices. The study highlights the efficient integration of these ultrathin materials using advanced printing techniques, contributing to the development of compact and high-performance electronic and optoelectronic devices.

Abstract

The p-n junction diode and field-effect transistor are foundational elements in modern electronics and optoelectronics. While high-performance field-effect devices have been realized using monolayered materials and their heterostructures, there has been a notable absence of p-n heterojunction diodes derived from inkjet-printed two-dimensional (2D) materials, which may lead to the development of complex electronic and optoelectronic circuits. This study addresses this gap by detailing the development and characterization of heterojunction p-n diodes fabricated through the inkjet printing of carbon nanotubes (CNTs) and molybdenum disulfide (MoS2). The use of inkjet printing technology for both CNTs and MoS2 allows for precise, scalable, and cost-effective fabrication. The resulting heterojunction diodes exhibit excellent diode behavior, with a rectification ratio exceeding 103. Additionally, the diode shows significant photoconductive properties, with a rapid photoresponse time of approximately 2 µs. This swift photoresponse is essential for high-speed optoelectronic applications, making the diode a promising component in advanced electronic systems. The study underscores the potential of inkjet printing technology to revolutionize the production of sophisticated, low-cost electronic devices with superior performance metrics, particularly in terms of photoresponse efficiency and speed. The integration of CNTs and MoS2 via inkjet printing not only streamlines the manufacturing process but also enhances the functional properties of the heterojunction diodes, positioning it as a viable candidate for future optoelectronic applications.

Keywords

carbon nanotube (CNT)MoS2heterojunction p-n diodephoto responseinkjet printing

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References

[1]

Feng, X. J.; Zhao, X.; Yang, L.; Li, M. Y.; Qie, F. X.; Guo, J. H.; Zhang, Y. C.; Li, T. H.; Yuan, W. X.; Yan, Y. All carbon materials p-n diode. Nat. Commun. 2018, 9, 3750.

Crossref Google Scholar
[2]
Galluzzo, A.; Melito, M.; Musumeci, S.; Saggio, M.; Raciti, A. A new high voltage power MOSFET for power conversion applications. In Proceedings of 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy, Rome, Italy, 2000, pp 2966–2973.
Crossref
[3]

Jariwala, D.; Sangwan, V. K.; Wu, C. C.; Prabhumirashi, P. L.; Geier, M. L.; Marks, T. J.; Lauhon, L. J.; Hersam, M. C. Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode. Proc. Natl. Acad. Sci. USA 2013, 110, 18076–18080.

Crossref Google Scholar
[4]

Liu, X. H.; Mao, Y. L. p-type high-performance WSi2N4 MOSFETs with the ultrashort scale of sub-5 nm. ACS Appl. Electron. Mater. 2023, 5, 6716–6724.

Crossref Google Scholar
[5]

Xia, H.; Luo, M.; Wang, W. J.; Wang, H. L.; Li, T. X.; Wang, Z.; Xu, H. Y.; Chen, Y.; Zhou, Y.; Wang, F. et al. Pristine PN junction toward atomic layer devices. Light Sci. Appl. 2022, 11, 170.

Crossref Google Scholar
[6]

Jung, Y.; Li, X. K.; Rajan, N. K.; Taylor, A. D.; Reed, M. A. Record high efficiency single-walled carbon nanotube/silicon p-n junction solar cells. Nano Lett. 2013, 13, 95–99.

Crossref Google Scholar
[7]

Ji, P. R.; Yang, S. M.; Wang, Y.; Li, K. L.; Wang, Y. M.; Suo, H.; Woldu, Y. T.; Wang, X. M.; Wang, F.; Zhang, L. L. et al. High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction. Microsyst. Nanoeng. 2022, 8, 9.

Crossref Google Scholar
[8]

Zhang, M.; Zhang, F.; Wang, Y.; Zhu, L. J.; Hu, Y. F.; Lou, Z. D.; Hou, Y. B.; Teng, F. High-performance photodiode-type photodetectors based on polycrystalline formamidinium lead iodide perovskite thin films. Sci. Rep. 2018, 8, 11157.

Crossref Google Scholar
[9]

Wu, G.; Tang, L. B.; Deng, G. R.; Liu, L. N.; Hao, Q.; Yuan, S. Z.; Wang, J. Y.; Wei, H.; Zhao, Y. P.; Yue, B. et al. Transparent dual-band ultraviolet photodetector based on graphene/p-GaN/AlGaN heterojunction. Opt. Express 2022, 30, 21349–21361.

Crossref Google Scholar
[10]

Shen, C. F.; Liu, Y. H.; Wu, J. B.; Xu, C.; Cui, D. Z.; Li, Z.; Liu, Q. Z.; Li, Y. R.; Wang, Y. X.; Cao, X. et al. Tellurene photodetector with high gain and wide bandwidth. ACS Nano 2020, 14, 303–310.

Crossref Google Scholar
[11]

Mahmoodi, E.; Amiri, M. H.; Salimi, A.; Frisenda, R.; Flores, E.; Ares, J. R.; Ferrer, I. J.; Castellanos-Gomez, A.; Ghasemi, F. Paper-based broadband flexible photodetectors with van der Waals materials. Sci. Rep. 2022, 12, 12585.

Crossref Google Scholar
[12]

Pejović, V.; Lee, J.; Georgitzikis, E.; Li, Y. L.; Kim, J. H.; Lieberman, I.; Malinowski, P. E.; Heremans, P.; Cheyns, D. Thin-film photodetector optimization for high-performance short-wavelength infrared imaging. IEEE Electron Device Lett. 2021, 42, 1196–1199.

Crossref Google Scholar
[13]

Li, X.; Aftab, S.; Hussain, S.; Kabir, F.; Al-Sehemi, A. G.; Aslam, M.; Kim, J. H.; Goud, B. S. Progress in photodetector devices utilizing transition metal dichalcogenides. J. Mater. Chem. C 2024, 12, 1211–1232.

Crossref Google Scholar
[14]

Lv, Z. J.; He, G.; Qiu, C. F.; Fan, Y. Y.; Wang, H. Y.; Liu, Z. J. CMOS monolithic photodetector with a built-in 2-dimensional light direction sensor for laser diode based underwater wireless optical communications. Opt. Express 2021, 29, 16197–16204.

Crossref Google Scholar
[15]

Mallik, S. K.; Padhan, R.; Roy, S.; Sahu, M. C.; Sahoo, S.; Sahoo, S. Direct transfer of monolayer MoS2 device arrays for potential applications in flexible electronics. ACS Appl. Nano Mater. 2024, 7, 4796–4804.

Crossref Google Scholar
[16]

Zhu, W. J.; Low, T.; Lee, Y. H.; Wang, H.; Farmer, D. B.; Kong, J.; Xia, F. N.; Avouris, P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 2014, 5, 3087.

Crossref Google Scholar
[17]

Sebastian, A.; Pendurthi, R.; Choudhury, T. H.; Redwing, J. M.; Das, S. Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nat. Commun. 2021, 12, 693.

Crossref Google Scholar
[18]

Tsai, H. J.; Yang, Y. K.; Li, Y. C.; Yeh, J.; Chen, P. C.; Kuo, Y. H.; Hsu, W. K. Production of carbon nanotube paper-based thermoelectric devices with the peltier effect. ACS Appl. Electron. Mater. 2023, 5, 4445–4450.

Crossref Google Scholar
[19]

Li, Z.; Jinkins, K. R.; Cui, D. Z.; Chen, M. R.; Zhao, Z. Y.; Arnold, M. S.; Zhou, C. W. Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics. Nano Res. 2022, 15, 864–871.

Crossref Google Scholar
[20]

Huo, N. J.; Yang, Y. J.; Wu, Y. N.; Zhang, X. G.; Pantelides, S. T.; Konstantatos, G. High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression. Nanoscale 2018, 10, 15071–15077.

Crossref Google Scholar
[21]

Kim, T.; Fan, S. D.; Lee, S.; Joo, M. K.; Lee, Y. H. High-mobility junction field-effect transistor via graphene/MoS2 heterointerface. Sci. Rep. 2020, 10, 13101.

Crossref Google Scholar
[22]

Das, S.; Lee, B. H.; Linstadt, R. T. H.; Cunha, K.; Li, Y. L.; Kaufman, Y.; Levine, Z. A.; Lipshutz, B. H.; Lins, R. D.; Shea, J. E. et al. Molecularly smooth self-assembled monolayer for high-mobility organic field-effect transistors. Nano Lett. 2016, 16, 6709–6715.

Crossref Google Scholar
[23]

Chen, M. R.; Zhang, A. Y.; Liu, Y. H.; Cui, D. Z.; Li, Z.; Chung, Y. H.; Mutyala, S. P.; Mecklenburg, M.; Nie, X.; Xu, C. et al. Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate. Nano Res. 2020, 13, 2625–2631.

Crossref Google Scholar
[24]

Zub, K.; Hoeppener, S.; Schubert, U. S. Inkjet printing and 3D printing strategies for biosensing, analytical, and diagnostic applications. Adv. Mater. 2022, 34, 2105015.

Crossref Google Scholar
[25]

Singh, M.; Haverinen, H. M.; Dhagat, P.; Jabbour, G. E. Inkjet printing-process and its applications. Adv. Mater. 2010, 22, 673–685.

Crossref Google Scholar
[26]

Wang, H. L.; Dong, Y.; Fu, X.; Zhao, X. Z.; Zhao, Q. X.; Xia, M. J. Heterojunction infrared photodiodes with high dynamic range based on lead sulfide quantum dot and zinc oxide nanomembrane. IEEE Trans. Nanotechnol. 2023, 22, 359–364.

Crossref Google Scholar
[27]

Chen, M. R.; Cui, D. Z.; Wang, N.; Weng, S. Z.; Zhao, Z. Y.; Tian, F. G.; Gao, X. B.; He, K. M.; Chiang, C. T.; Albawardi, S. et al. Inkjet-printed MoS2 nanoplates on flexible substrates for high-performance field effect transistors and gas sensing applications. ACS Appl. Nano Mater. 2023, 6, 3236–3244.

Crossref Google Scholar
[28]

Wen, D.; Wang, X.; Liu, L.; Hu, C.; Sun, C.; Wu, Y. R.; Zhao, Y. L.; Zhang, J. X.; Liu, X. D.; Ying, G. B. Inkjet printing transparent and conductive MXene (Ti3C2T x ) films: A strategy for flexible energy storage devices. ACS Appl. Mater. Interfaces 2021, 13, 17766–17780.

Crossref Google Scholar
[29]

Hayman, M.; McMenamin, K. J.; Jensen, J. B. Response time characteristics of the fast-2D optical array probe detector board. J. Atmos. Ocean. Technol. 2016, 33, 2569–2583.

Crossref Google Scholar
[30]

Wang, Y. F.; Zou, X. P.; Zhu, J. L.; Zhang, C. Q.; Cheng, J.; Wang, J. Q.; Wang, X. L.; Li, X. T.; Song, K. K.; Ren, B. K. et al. Investigation of the photoresponse and time-response characteristics of HDA-BiI5-based photodetectors. Materials 2022, 15, 321.

Crossref Google Scholar
[31]

Wu, F.; Li, Q.; Wang, P.; Xia, H.; Wang, Z.; Wang, Y.; Luo, M.; Chen, L.; Chen, F. S.; Miao, J. S. et al. High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region. Nat. Commun. 2019, 10, 4663.

Crossref Google Scholar
[32]

Pan, T.; Liu, S. H.; Zhang, L. T.; Xie, W. F. Flexible organic optoelectronic devices on paper. iScience 2022, 25, 103782.

Crossref Google Scholar
[33]
Tsai, C. H.; Lee, S. G.; Chen, C. K.; Hsu, C. H.; Lee, C. S.; Shen, K. Y.; Cheng, S. C.; Lee, C. H.; Cheng, F. Y.; Huang, M. F. et al. Low-cost and highly reliable optoelectronic devices for 10-Gb/s Ethernet applications. In Proceedings of SPIE 5595, Active and Passive Optical Components for WDM Communications IV, Philadelphia, Pennsylvania, United States, 2004, pp 371–382.
Crossref
[34]
Lowry, M.; Lu, S. Y.; Pocha, M.; Strand, O. T. Low-cost packaging of high-performance optoelectronic components. In Proceedings of the Integrated Photonics Research, Dana Point, California United States, 1995, pp IThE3.
Crossref
[35]

Zhang, C.; Tan, J. Y.; Pan, Y. K.; Cai, X. K.; Zou, X. L.; Cheng, H. M.; Liu, B. L. Mass production of 2D materials by intermediate-assisted grinding exfoliation. Natl. Sci. Rev. 2020, 7, 324–332.

Crossref Google Scholar
[36]

Zhang, C.; Luo, Y. T.; Tan, J. Y.; Yu, Q. M.; Yang, F. N.; Zhang, Z. Y.; Yang, L. S.; Cheng, H. M.; Liu, B. L. High-throughput production of cheap mineral-based two-dimensional electrocatalysts for high-current-density hydrogen evolution. Nat. Commun. 2020, 11, 3724.

Crossref Google Scholar
[37]

Sangwan, V. K.; Beck, M. E.; Henning, A.; Luo, J. J.; Bergeron, H.; Kang, J. M.; Balla, I.; Inbar, H.; Lauhon, L. J.; Hersam, M. C. Self-aligned van der Waals heterojunction diodes and transistors. Nano Lett. 2018, 18, 1421–1427.

Crossref Google Scholar
[38]

Kim, B. H.; Kang, J. W. Electroluminescent MgZnO/ZnO heterojunction diode. Appl. Sci. Converg. Technol. 2023, 32, 151–154.

Crossref Google Scholar
[39]

Yan, R. S.; Fathipour, S.; Han, Y. M.; Song, B.; Xiao, S. D.; Li, M. D.; Ma, N.; Protasenko, V.; Muller, D. A.; Jena, D. et al. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Lett. 2015, 15, 5791–5798.

Crossref Google Scholar
[40]

Chen, Y.; Wang, X. D.; Huang, L.; Wang, X. T.; Jiang, W.; Wang, Z.; Wang, P.; Wu, B. M.; Lin, T.; Shen, H. et al. Ferroelectric-tuned van der Waals heterojunction with band alignment evolution. Nat. Commun. 2021, 12, 4030.

Crossref Google Scholar
[41]

Maheswaran, R.; Shanmugavel, B. P. A critical review of the role of carbon nanotubes in the progress of next-generation electronic applications. J. Electron. Mater. 2022, 51, 2786–2800.

Crossref Google Scholar
[42]

Lee, D. K.; Yoo, J.; Kim, H.; Kang, B. H.; Park, S. H. Electrical and thermal properties of carbon nanotube polymer composites with various aspect ratios. Materials 2022, 15, 1356.

Crossref Google Scholar
[43]

Cheng, Z. F.; He, S. D.; Han, X. N.; Zhang, X. D.; Chen, L. N.; Duan, S. J.; Zhang, S. M.; Xia, M. G. Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition. J. Mater. Chem. C 2024, 12, 2794–2802.

Crossref Google Scholar
[44]

Ji, L. P.; Shi, J.; Zhang, Z. Y.; Wang, J.; Zhang, J. C.; Tao, C. L.; Cao, H. N. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2. J. Chem. Phys. 2018, 148, 014704.

Crossref Google Scholar
[45]

Jorio, A.; Saito, R. Raman spectroscopy for carbon nanotube applications. J. Appl. Phys. 2021, 129, 021102.

Crossref Google Scholar
[46]

Yang, M. M.; Liu, Y.; Cong, R. D.; Zhang, Y.; Zhang, Y. F.; Tan, L.; Hu, X. W.; Wu, C. L.; Liu, Y. L.; Dang, W. et al. Angle-resolved polarized Raman spectra of linear MoS2 nanostructures for optical anisotropy detection. ACS Appl. Nano Mater. 2023, 6, 11299–11308.

Crossref Google Scholar
[47]

Kang, D. H.; Park, N.; Ko, J. H.; Bae, E.; Park, W. Oxygen-induced p-type doping of a long individual single-walled carbon nanotube. Nanotechnology 2005, 16, 1048–1052.

Crossref Google Scholar
[48]

Park, Y.; Li, N. N.; Jung, D.; Singh, L. T.; Baik, J.; Lee, E.; Oh, D.; Kim, Y. D.; Lee, J. Y.; Woo, J. et al. Unveiling the origin of n-type doping of natural MoS2: Carbon. npj 2D Mater. Appl. 2023, 7, 60.

Crossref Google Scholar
[49]

Meng, Y.; Wang, W. J.; Wang, W.; Li, B. W.; Zhang, Y. X.; Ho, J. Anti-ambipolar heterojunctions: Materials, devices, and circuits. Adv. Mater. 2024, 36, 2306290.

Crossref Google Scholar
[50]

Lv, Y. H.; Wu, C. Y.; Zhao, Y.; Wu, G.; Abid, M.; Cho, J.; Choi, M.; Coileáin, Ó. C.; Hung, K. M.; Chang, C. R. et al. Robust anti-ambipolar behavior and gate-tunable rectifying effect in van der Waals p-n junctions. ACS Appl. Electron. Mater. 2022, 4, 5487–5497.

Crossref Google Scholar
[51]

Li, X.; Carey, J. E.; Sickler, J. W.; Pralle, M. U.; Palsule, C.; Vineis, C. J. Silicon photodiodes with high photoconductive gain at room temperature. Opt. Express 2012, 20, 5518–5523.

Crossref Google Scholar
Nano Research
Volume 18 Issue 1,
January 2025
Article number: 94907059
DOI: 10.26599/NR.2025.94907059
Cite this article:
Tian F, Cui D, Chen M, et al. Inkjet-printed carbon nanotube-MoS2 heterojunction p-n diodes. Nano Research, 2025, 18(1): 94907059. https://doi.org/10.26599/NR.2025.94907059
Topics:
HeterojunctionsLayered semiconductorsPhotodetectorsSemiconductor devices
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