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Research Article | Open Access

High-performance self-rectifying memristor array based on Pt/HfO2/Ta2O5−x/Ti structure for flexible electronics

Shang He1,2,3,§, Xiaoyu Ye2,3,§, Xiaojian Zhu2,3 (), Qing Zhong1, Yulin Liu1, Gang Li1, Rui Liu1, Xiaohan Meng2,3, Yongguang Xiao1, Shaoan Yan4 (), Minghua Tang1 ()
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Chinese Academy of Sciences (CAS) Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
School of Mechanical Engineering and Mechanics, Xiangtan University, Xiangtan 411105, China

§ Shang He and Xiaoyu Ye contributed equally to this work.

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A high-performance self-rectifying memristor array based on Pt/HfO2/Ta2O5−x/Ti heterojunctions is presented. This array exhibits exceptional properties including forming-free operation, a high rectification ratio, long retention time, high endurance, etc. Fabricated on a flexible polyimide substrate, array demonstrates superior self-rectifying performance under bending conditions. It possesses noise filtering and data storage capabilities, enabling accurate processing and storage of signals transmitted by a pressure sensor array.

Abstract

Self-rectifying memristor (SRM) arrays hold tremendous potential in high-density data storage and energy-efficient neuromorphic computing. However, SRM arrays are mostly developed on rigid substrates and lack mechanical flexibility, limiting their applications in intelligent electronic skin, wearable technologies, etc. Here, we present a high-performance SRM array based on Pt/HfO2/Ta2O5−x/Ti heterojunctions, which can be fabricated on a flexible polyimides (PI) substrate and demonstrates exceptional memristive performance under bending conditions (bending radius (R) = 1 cm, rectifying ratio > 104, retention time > 104 s and endurance > 105 cycles). We demonstrate a 16 × 16 flexible memristor array offering noise filtering and data storage capabilities, which can be used to accurately process and store the signals transmitted by a pressure sensor array. This research represents an important advancement towards the realization of next-generation high-performance flexible electronics.

Keywords

self-rectifying memristorcrossbar arrayflexible electronicsnoise filteringtactile memory

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Nano Research
Volume 18 Issue 2,
February 2025
Article number: 94907085
DOI: 10.26599/NR.2025.94907085
Cite this article:
He S, Ye X, Zhu X, et al. High-performance self-rectifying memristor array based on Pt/HfO2/Ta2O5−x/Ti structure for flexible electronics. Nano Research, 2025, 18(2): 94907085. https://doi.org/10.26599/NR.2025.94907085
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