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Research Article | Open Access

Synthesis of wafer-scale monolayer MoS2 on sapphire: Unlocking the influence of key growth parameters

Rong Song1,§, Dingyi Shen2,§, Dongyan Liu1, Jingyi Liang1, Zimei Zhang1, Jingmei Tang1, Liang Chen1, Bo Li3, Jia Li1 (), Xidong Duan1 ()
Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/ Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Chongqing Research Institute, Hunan University, Changsha 410082, China
Hubei Key Laboratory of Energy Storage and Power Battery, School of Mathematics, Physics and Optoelectronic Engineering, Hubei University of Automotive Technology, Shiyan 442002, China
College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China

§ Rong Song and Dingyi Shen contributed equally to this work.

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The influence of critical growth parameters on the synthesis of wafer-scale MoS2 films has been revealed and 2-in monolayer MoS2 continuous films on c-plane sapphire under optimized growth conditions have been obtained via low-pressure chemical vapor deposition (CVD) system with a three-zone tube furnace.

Abstract

Large-scale synthesis of high-quality two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), is a prerequisite for their lab-to-fab transition. It is crucial to systematically explore and understand the influence of key synthetic conditions on the nucleation, uniformity, and quality of MoS2 wafers. Here, we report the epitaxial growth of high-quality and uniform monolayer MoS2 films on 2-in c-plane sapphire by chemical vapor deposition (CVD) method under optimized growth conditions (0–1 mg NaCl, adequate S/Mo ratio, and the addition of 0–1 sccm O2). We systematically explore the influence of critical synthetic conditions on the nucleation, and stitching of MoS2 domains over the wafer scale, including the dosage of the alkali metal salt NaCl additive, the evaporation temperature of MoO3, the distance between MoO3 and the substrate, and the flow rate of O2. Among them, the dosage of NaCl and the S/Mo ratio have important influences on the quality and film coverage of MoS2, while the flow rate of O2 plays a key role in controlling the nucleation density and domain size. We further discovered that a-plane sapphire could easily guide the unidirectional growth of MoS2 without the need for other specific synthetic conditions compared with c-plane and m-plane sapphire. The field-effect transistors (FETs) fabricated from the full-coverage films show an average and the highest mobilities of 28.5 and around 45 cm2·V−1·s−1, respectively.

Keywords

wafer-scale MoS2 filmschemical vapor depositioncritical synthetic conditionsmonolayerfield-effect transistors

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Nano Research
Volume 18 Issue 2,
February 2025
Article number: 94907140
DOI: 10.26599/NR.2025.94907140
Cite this article:
Song R, Shen D, Liu D, et al. Synthesis of wafer-scale monolayer MoS2 on sapphire: Unlocking the influence of key growth parameters. Nano Research, 2025, 18(2): 94907140. https://doi.org/10.26599/NR.2025.94907140
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