High-performance flexible Sb₂Se₃ thin-film photodetector for tunable color imaging and wearable physiological monitoring applications

Shuo Chen^¹, Hong-Bo Li^¹, Yi Fu^¹, Guo-Qiang Liu^², Muhammad Ishaq^¹, Jun Luo^³, Jian-Min Li^³, Bo Che^⁴, Jing-Ting Luo^¹, Liming Ding^⁵(), Tao Chen^⁴

(), Guang-Xing Liang^¹

()

1Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

2The Hospital of Shenzhen General Station of Exit and Entry Frontier Inspection, Shenzhen 518024, China

3Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China

4Hefei National Research Center for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China

5Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China

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A flexible Sb₂Se₃ thin-film photodetector is developed on flexible polyimide substrate, which showcases exceptional responsivity, detectivity, ultra-fast response speed, and remarkable mechanical flexibility. Interestingly, it demonstrates great application potential in tunable single/dual-color flexible imaging, and wearable heart rate/arterial blood oxygen saturation photoplethysmography monitoring.

Abstract

Antimony selenide (Sb₂Se₃) has recently made considerable advancements in photovoltaic, photoelectrochemical, and photodetector research scenarios, owing to its advantageous material merits and superior optoelectronic properties. By contrast, the exploration of flexible Sb₂Se₃ photoelectric devices are less attempted, though it possesses unique one-dimensional (1D) crystal structure to enable large deformation tolerance. Here, we develop a flexible Sb₂Se₃ thin-film photodetector on polyimide substrate. Thanks to the high-quality Sb₂Se₃ light absorber and benign interfaces at both back contact and heterojunction regions, the carrier dynamics are effectively optimized. The leading flexible Sb₂Se₃ photodetector showcases self-powered and broadband features, with exceptional responsivity of 0.51 A·W^–1 and realistic detectivity up to 1.32 × 10¹³ Jones, ultra-fast response speed of 49 ns/351 ns of rise and decay times, and remarkable mechanical deformation stability, flourishing the high-level development for flexible Sb₂Se₃ photodetectors. Interestingly, a tunable single/dual-color flexible imaging system under band alignment modulation, along with a wearable and accurate heart rate/arterial blood oxygen saturation photoplethysmography detection system highlights the great application potential for flexible Sb₂Se₃ photodetectors.

Keywords

Sb₂Se₃ flexible thin-film photodetector color imaging heart rate arterial blood oxygen saturation

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References

[1]

Huang, M. Q.; Wang, M. L.; Chen, C.; Ma, Z. W.; Li, X. F.; Han, J. B.; Wu, Y. Q. Broadband black-phosphorus photodetectors with high responsivity. Adv. Mater. 2016, 28, 3481–3485.

Photodetectors	R (A·W⁻¹)	D* (Jones)	τ_rise/τ_decay	NEP (W)	LDR (dB)	Year	Ref.
^aThe total noise determined realistic detectivity, i.e., $D * = \frac{\sqrt{S Δ f}}{NEP}$ . ^bThe shot noise determined specific detectivity, i.e., $D * = \frac{R}{{(\frac{2 q I_{dark}}{S})}^{1 / 2}}$ .
Sb₂Se₃/CdS	0.51@635 nm	1.32 × 10^{13 a}	49/351 ns	2.53 × 10⁻¹⁴	109	2024	This work
Sb₂Se₃/CdS	0.42@625 nm	2.4 × 10^{11 a}	1.8/1.6 μs	2.3 × 10⁻¹²	95	2020	Chen [13]
Sb₂Se₃/ZnO	0.0078@905 nm	2.45 × 10^{11 a}	39/144 μs	—	—	2021	Jiang [31]
Sb₂Se₃/CdS	0.74@940 nm	5.1 × 10^{13 b}	160/150 μs	—	102	2023	Wen [19]
Si/Ag	0.11@808 nm	5.5 × 10^{12 b}	29/51 μs	—	—	2021	Zhang [32]
PbS CQDs/ZnO	0.38@620 nm	1.01 × 10^{12 b}	4.8/5.1 μs	1.87 × 10⁻¹³	85	2023	Liu [33]
Graphene/γ-InSe	0.468@360 nm	1.9 × 10^{12 a}	45/66 ms	—	—	2024	Li [34]
MoTe₂/InSe	0.434@450 nm	1.65 × 10^{12 b}	99/117 μs	—	—	2024	He [35]
SnO₂/FASnI₃	0.37@785 nm	2.2 × 10^{13 a}	2.62/5.91 μs	2.1 × 10⁻¹³	—	2024	Liu [29]
PEIE/P₃HT:ICBA	0.1@525 nm	1.1 × 10^{12 a}	35/35 μs	1.12 × 10⁻¹²	~ 160	2020	Canek [24]
PEDOT:PSS/ITO	0.53@830 nm	2.0 × 10^{12 a}	91/102 ns	4 × 10⁻¹¹	130	2023	Zhu [36]

Devices	E_a (meV)	N_t (cm⁻³)	V_TFL (V)	N_trap (cm⁻³)	W_d (nm)	N_i (cm⁻³)	Ф_B (meV)	R_ser (Ω)
Rigid	300	6.38 × 10¹⁶	0.26	4.33 × 10¹⁴	242	4.31 × 10¹⁶	145	8 × 10⁴
Flexible	262	4.85 × 10¹⁶	0.19	2.20 × 10¹⁴	252	1.72 × 10¹⁶	113	1.9 × 10⁵

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