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Review Article | Open Access

A review on monolithic 3D integration: From bulk semiconductors to low-dimensional materials

Ziying Hu1,§, Hongtao Li1,§, Mingdi Zhang1, Zeming Jin1, Jixiang Li1, Wenku Fu1, Yunyun Dai1, Yuan Huang1 (), Xia Liu1 (), Yeliang Wang1 ()
School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China

§ Ziying Hu and Hongtao Li contributed equally to this work.

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This review offers a comprehensive overview of recent advancements in themonolithic three-dimensional (M3D) integration, tracing its evolution from traditionalbulk semiconductors to low-dimensional materials. We also summarize the keyapplications of M3D integrated circuits, including logic circuits, static random accessmemory, various types of sensors, and artificial intelligence (AI) computing.

Abstract

Monolithic three-dimensional (M3D) integration represents a transformative approach in semiconductor technology, enabling the vertical integration of diverse functionalities within a single chip. This review explores the evolution of M3D integration from traditional bulk semiconductors to low-dimensional materials like two-dimensioanl (2D) transition metal dichalcogenides (TMDCs) and carbon nanotubes (CNTs). Key applications include logic circuits, static random access memory (SRAM), resistive random access memory (RRAM), sensors, optoelectronics, and artificial intelligence (AI) processing. M3D integration enhances device performance by reducing footprint, improving power efficiency, and alleviating the von Neumann bottleneck. The integration of 2D materials in M3D structures demonstrates significant advancements in terms of scalability, energy efficiency, and functional diversity. Challenges in manufacturing and scaling are discussed, along with prospects for future research directions. Overall, the M3D integration with low-dimensional materials presents a promising pathway for the development of next-generation electronic devices and systems.

Keywords

monolithic three-dimensional (M3D) integrationtwo-dimensional (2D) materiallogic circuitstatic random access memory (SRAM)resistive random access memory (RRAM)sensoroptoelectronicsartificial intelligence

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Nano Research
Volume 18 Issue 3,
March 2025
Article number: 94907225
DOI: 10.26599/NR.2025.94907225
Cite this article:
Hu Z, Li H, Zhang M, et al. A review on monolithic 3D integration: From bulk semiconductors to low-dimensional materials. Nano Research, 2025, 18(3): 94907225. https://doi.org/10.26599/NR.2025.94907225
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