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Research Article | Open Access

Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer

Yanbo Shang1, Pu Wang1, Lingbo Jia1, Xingcheng Li1, Weitao Lian1, Peisen Qian1, Muqing Chen2, Tao Chen1, Yalin Lu1, Shangfeng Yang1()
CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
School of Environment and Civil Engineering, Dongguan University of Technology, Dongguan 523808, China
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A bis-dimethylamino-functionalized fullerene derivative PCBDMAM is incorporated as an interlayer between ZnO electron transport layer and all-inorganic CsPbI2.25Br0.75 perovskite layer, resulting in synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of perovskite solar cells (PSCs) devices.

Abstract

All-inorganic CsPbI3–xBrx perovskite solar cells (PSCs) are advantageous in terms of high thermal stability, while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts. Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs, which are mainly based on univocal defect passivation of perovskite layer. Herein, we incorporated a bis-dimethylamino-functionalized fullerene derivative (abbreviated as PCBDMAM) as an interlayer between ZnO electron transport layer (ETL) and all-inorganic CsPbI2.25Br0.75 perovskite layer, accomplishing synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of PSC devices. Upon spin-coating PCBDMAM onto ZnO ETL, the surface defects of ZnO especially oxygen vacancies can be effectively passivated due to the formation of Zn−N ionic bonds. In addition, PCBDMAM incorporation affords effective passivation of PbI and IPb antisite defects within the atop perovskite layer as well via coordination bonding with Pb2+. As a result, the regular-structure planar CsPbI2.25Br0.75 PSC device delivers a champion power conversion efficiency (PCE) of 17.04%, which surpasses that of the control device (15.44%). Moreover, the PCBDMAM-incorporated PSC device maintains ~ 80% of its initial PCE after 600 h heating at 85 °C hot plate in N2 atmosphere, whereas PCE of the control device degrades rapidly to ~ 62% after 460 h heating under identical conditions. Hence, PCBDMAM incorporation benefited dramatic improvement of the thermal stability of PSC device.

Keywords

all-inorganic perovskite solar cellsfullerene derivativeelectron transport layerthermal stabilitydefect passivation

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Nano Research Energy
Volume 2 Issue 3,
September 2023
Pages e9120073-e9120073
DOI: 10.26599/NRE.2023.9120073
Cite this article:
Shang Y, Wang P, Jia L, et al. Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer. Nano Research Energy, 2023, 2: e9120073. https://doi.org/10.26599/NRE.2023.9120073
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Photovoltaic parameters of CsPbI2.25Br0.75 PSCs based on ZnO with different concentration of PCBDMAM modification

PCBDMAM concentration (mg·mL–1)Voc (V)Jsc (mA·cm–2)FF (%)PCE (%)Rsb (Ω·cm2)Rshb (Ω·cm2)
aAveraged over 24 devices fabricated independently. bRs and Rsh are given by the PCE measurement system.
0 (control)Averagea1.118 ± 0.05516.67 ± 0.3572.96 ± 3.6814.45 ± 1.0712.66506.2
Best1.17716.8877.7115.446.710406.7
1Averagea1.173 ± 0.04216.47 ± 1.3676.34 ± 1.8515.36 ± 0.665.212613.8
Best1.21316.6779.9216.244.815829.1
2Averagea1.218 ± 0.03516.45 ± 0.5380.69 ± 2.5916.18 ± 0.774.813268.5
Best1.24816.3683.4517.044.519260.4
5Averagea1.206 ± 0.07315.77 ± 0.7978.98 ± 2.4515.38 ± 0.9611.69881.3
Best1.23016.0879.1515.658.79827.3