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Open Access

Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors

Zhaoyi Yan, Guangyang Gou, Jie Ren, Fan Wu, Yang Shen, He Tian( ), Yi Yang ( ), Tian-Ling Ren( )
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Institute of Microelectronics, and Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
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Abstract

Three main ambipolar compact models for Two-Dimensional (2D) materials based Field-Effect Transistors (2D-FETs) are reviewed: (1) Landauer model, (2) 2D Pao-Sah model, and (3) virtual Source Emission-Diffusion (VSED) model. For the Landauer model, the Gauss quadrature method is applied, and it summarizes all kinds of variants, exhibiting its state-of-art. For the 2D Pao-Sah model, the aspects of its theoretical fundamentals are rederived, and the electrostatic potentials of electrons and holes are clarified. A brief development history is compiled for the VSED model. In summary, the Landauer model is naturally appropriate for the ballistic transport of short channels, and the 2D Pao-Sah model is applicable to long-channel devices. By contrast, the VSED model offers a smooth transition between ultimate cases. These three models cover a fairly completed channel length range, which enables researchers to choose the appropriate compact model for their works.

Keywords

Field-Effect Transistor (FET)compact modelambipolar transportLandauer formulaPao-Sah modelvirtual source

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Tsinghua Science and Technology
Volume 26 Issue 5,
October 2021
Pages 574-591
DOI: 10.26599/TST.2020.9010064
Cite this article:
Yan Z, Gou G, Ren J, et al. Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors. Tsinghua Science and Technology, 2021, 26(5): 574-591. https://doi.org/10.26599/TST.2020.9010064

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Received: 28 November 2020
Accepted: 16 December 2020
Published: 20 April 2021
© The author(s) 2021

© The author(s) 2021. The articles published in this open access journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/).
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