State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China
School of Science, Minzu University of China, Beijing 100081, China
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, and Beijing Information Science and Technology University, Beijing 100101, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Abstract
Green Perovskite Light-Emitting Diodes (PeLEDs) have attracted wide attention for full spectrum displays. However, the inferior film morphology and luminescence property of quasi-two-dimensional (quasi-2D) perovskite layers limit the photoelectric property of the PeLEDs. In this paper, the effect of strontium (Sr) doped in quasi-2D perovskite layers is investigated to obtain a high-quality active layer. The morphologies and optical properties of Sr-doped quasi-2D perovskite films with different concentrations are studied. With the addition of strontium, more low-dimensional-layer perovskite phases ( and ) appear in quasi-2D perovskite films, providing efficient intraband carrier funneling pathway and facilitating radiative recombination. The photoluminescence (PL) peak intensity of optimized Sr-doped quasi-2D perovskite layers increases 50% compared with the non-strontium counterpart. Moreover, green PeLEDs based on a Sr-doped quasi-2D perovskite layer reach a maximum luminance () of 2943.77 cd/m, which is three times of the control device. The electroluminescence (EL) peaks of Maximum External Quantum Efficiency (MEQE) and of Sr-doped PeLEDs exhibite a slight shift, indicating the excellent stability and performance of Sr-doped devices. The optimized device can continuously operate for 360 s at MEQE driving voltage, resulting in a half-lifetime of 60 s, which is 3-fold greater than that of the control PeLEDs.
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