State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China
School of Science, Minzu University of China, Beijing 100081, China
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, and Beijing Information Science and Technology University, Beijing 100101, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Abstract
Green Perovskite Light-Emitting Diodes (PeLEDs) have attracted wide attention for full spectrum displays. However, the inferior film morphology and luminescence property of quasi-two-dimensional (quasi-2D) perovskite layers limit the photoelectric property of the PeLEDs. In this paper, the effect of strontium (Sr) doped in quasi-2D perovskite layers is investigated to obtain a high-quality active layer. The morphologies and optical properties of Sr-doped quasi-2D perovskite films with different concentrations are studied. With the addition of strontium, more low-dimensional-layer perovskite phases ( and ) appear in quasi-2D perovskite films, providing efficient intraband carrier funneling pathway and facilitating radiative recombination. The photoluminescence (PL) peak intensity of optimized Sr-doped quasi-2D perovskite layers increases 50% compared with the non-strontium counterpart. Moreover, green PeLEDs based on a Sr-doped quasi-2D perovskite layer reach a maximum luminance () of 2943.77 cd/m, which is three times of the control device. The electroluminescence (EL) peaks of Maximum External Quantum Efficiency (MEQE) and of Sr-doped PeLEDs exhibite a slight shift, indicating the excellent stability and performance of Sr-doped devices. The optimized device can continuously operate for 360 s at MEQE driving voltage, resulting in a half-lifetime of 60 s, which is 3-fold greater than that of the control PeLEDs.
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Chen D, Liu T, Zuo Y, et al. Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers. Tsinghua Science and Technology, 2023, 28(1): 131-140. https://doi.org/10.26599/TST.2021.9010031
The articles published in this open access journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/).
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SEM images of the top view of different concentrations of Sr-doped perovskite films on the PEDOT:PSS substrates.
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Absorbance and PL spectra of Sr-doped perovskite films. (a) Absorbance spectra and edge of the absorption spectrum are shown in the inset, (b) PL spectra and normalized spectra in the inset, and (c) logarithmic-scale plot of the PL spectrum in the linear scale.
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PL images of different concentrations of Sr-doped perovskite films on the PEDOT:PSS substrates under 365 nm ultraviolet lamp excitation.
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TRPL lifetime of different concentration Sr-doped perovskite films on the PEDOT:PSS substrates under 370 nm excitation.
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UPS spectra of perovskite samples. The left and right plots in (a)–(e) are the cut-off edge region and valence band-edge region, respectively.
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Device structure of the Sr-doped PeLEDs. (a) Schematic illustration with the Glass/ITO/PEDOT: PSS/Sr-doped perovskite/TPBi/LiF/Al and (b) SEM image of the cross-section of the PeLED device. Inset: photograph of a working PeLED.
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EL emission spectra of Sr-doped PeLED at different applied voltages. The red and green lines are the curves at MEQE and working voltages, respectively.
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Characterization of the PeLED performance. (a) Current-voltage, (b) luminance-voltage characteristics, and (c) EQE curves of the best PeLED.
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(a) Corresponding CIE chromaticity coordinates of the EL emission of Sr(0.02) PeLEDs. (b) EQE as functions of the device operation time. The PeLEDs of 0, Sr(0.02), Sr(0.04), Sr(0.02), and Sr(0.04) are measured at a constant driving voltage of 6.5, 6.5, 6.5, 7, and 7 V, respectively.
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