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Investigation on n-Type (–201) β-Ga2O3 Ohmic Contact via Si Ion Implantation

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Abstract

Heavy doped n-type β-Ga2O3 (HD-Ga2O3) was obtained by employing Si ion implantation technology on unintentionally doped β-Ga2O3 single crystal substrates. To repair the Ga2O3 lattice damage and activate the Si after implantation, the implanted substrates were annealed at 950℃, 1000℃, and 1100℃, respectively. High-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000℃. The minimum specific contact resistance is 9.2×10–5Ω·cm2, which is attributed to the titanium oxide that is formed at the Ti/Ga2O3 interface via rapid thermal annealing at 480℃. Based on these results, the lateral β-Ga2O3 diodes were prepared, and the diodes exhibit high forward current density and low specific on-resistance.

Keywords

β-Ga2O3ohmic contaction implantationannealing activation

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Tsinghua Science and Technology
Volume 28 Issue 1,
February 2023
Pages 150-154
DOI: 10.26599/TST.2021.9010039
Cite this article:
Ma P, Zheng J, Zhang Y, et al. Investigation on n-Type (–201) β-Ga2O3 Ohmic Contact via Si Ion Implantation. Tsinghua Science and Technology, 2023, 28(1): 150-154. https://doi.org/10.26599/TST.2021.9010039
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