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Open Access

Recent Progress and Applications of HfO2-Based Ferroelectric Memory

Beijing National Research Center for Information Science and Technology (BNRist), School of Integrated Circuits, Tsinghua University, Beijing 100084, China
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Abstract

The discovery of ferroelectricity in hafnium oxide (HfO2) based thin films in 2011 renewed the interest in ferroelectrics. These new ferroelectrics possess completely different crystal morphology with conventional perovskite ferroelectrics, and present more robust ferroelectric properties upon aggressive scaling and compatibility with standard integrated circuit fabrication processes. In this article, we give a brief introduction to the conventional ferroelectric memories, then review the basic properties, recent progress, and memory applications of these HfO2-based ferroelectrics.

Keywords

ferroelectric memorynon-volatile memoryhafnium oxidefluorite structure material

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Tsinghua Science and Technology
Volume 28 Issue 2,
April 2023
Pages 221-229
DOI: 10.26599/TST.2021.9010096
Cite this article:
Liu X, Geng X, Liu H, et al. Recent Progress and Applications of HfO2-Based Ferroelectric Memory. Tsinghua Science and Technology, 2023, 28(2): 221-229. https://doi.org/10.26599/TST.2021.9010096

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Received: 01 March 2021
Revised: 23 November 2021
Accepted: 22 December 2021
Published: 29 September 2022
© The author(s) 2023.

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