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Research Article

Facile Fabrication of All-SWNT Field-Effect Transistors

Shinya Aikawa1,2, Rong Xiang1,†, Erik Einarsson1,3, Shohei Chiashi1, Junichiro Shiomi1, Eiichi Nishikawa2, Shigeo Maruyama1( )
Department of Mechanical EngineeringThe University of TokyoBunkyo-kuTokyo113-8656Japan
Department of Electrical EngineeringTokyo University of Science1-3 KagurazakaShinjuku-kuTokyo162-8601Japan
Global Center of Excellence for Mechanical Systems InnovationThe University of Tokyo7-3-1 HongoBunkyo-kuTokyo113-8656Japan

†Present address: HKUST–SYSU Joint Laboratory of Nano Materials and Technology, State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

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Graphical Abstract

Abstract

Field-effect transistors (FETs) have been fabricated using as-grown single-walled carbon nanotubes (SWNTs) for the channel as well as both source and drain electrodes. The underlying Si substrate was employed as the back-gate electrode. Fabrication consisted of patterned catalyst deposition by surface modification followed by dip-coating and synthesis of SWNTs by alcohol chemical vapor deposition (CVD). The electrodes and channel were grown simultaneously in one CVD process. The resulting FETs exhibited excellent performance, with an ION/IOFF ratio of 106 and a maximum ON-state current (ION) exceeding 13 μA. The large ION is attributed to SWNT bundles connecting the SWNT channel with the SWNT electrodes. Bundling creates a large contact area, which results in a small contact resistance despite the presence of Schottky barriers at metallic–semiconducting interfaces. The approach described here demonstrates a significant step toward the realization of metal-free electronics.

Keywords

Single-walled carbon nanotubefield-effect transistorpatterned synthesisself-assembled monolayerSchottky barrierinterfacial dipole

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Nano Research
Volume 4 Issue 6,
June 2011
Pages 580-588
DOI: 10.1007/s12274-011-0114-0
Cite this article:
Aikawa S, Xiang R, Einarsson E, et al. Facile Fabrication of All-SWNT Field-Effect Transistors. Nano Research, 2011, 4(6): 580-588. https://doi.org/10.1007/s12274-011-0114-0

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Received: 14 January 2011
Revised: 06 February 2011
Accepted: 09 February 2011
Published: 02 April 2011
© Tsinghua University Press and Springer‐Verlag Berlin Heidelberg 2011
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