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Fabrication of high-quality all-graphene devices with low contact resistances
Guangyu Zhang1,2(
)
)Abstract
All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature (RT) between a bilayer graphene channel and a multilayer graphene electrode can be as low as ~5 Ω·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.
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Pages 1449-1456
Cite this article:
Yang R, Wu S, Wang D, et al. Fabrication of high-quality all-graphene devices with low contact resistances. Nano Research, 2014, 7(10): 1449-1456. https://doi.org/10.1007/s12274-014-0504-1
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