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Research Article

Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride

Yiming Zhu1,2, Xinsheng Wang2, Mei Zhang2, Congzhong Cai1( ), Liming Xie2( )
State Key Laboratory of Coal Mine Disaster Dynamics and ControlDepartment of Applied PhysicsChongqing UniversityChongqing400044China
CAS Key Laboratory of Standardization and Measurement for NanotechnologyCAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijing100190China
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Abstract

Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride (h-BN) by chemical vapor deposition. Hysteresis-free gate sweeping, metalinsulator transition, and T–γ (γ ~ 0.82–1.26) temperature dependent mobility were observed in the ZrS2 films.

Keywords

chemical vapor depositiontwo-dimensional materialsZrS2electrical transportmobility

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References

1

Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
Crossref Google Scholar
2

Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
Crossref Google Scholar
3

Lee, C. H.; Lee, G. H.; van der Zande, A. M.; Chen, W. C.; Li, Y. L.; Han, M. Y.; Cui, X.; Arefe, G.; Nuckolls, C.; Heinz, T. F. et al. Atomically thin p-n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 2014, 9, 676-681.
Crossref Google Scholar
4

Feng, Q. L.; Zhu, Y. M.; Hong, J. H.; Zhang, M.; Duan, W. J.; Mao, N. N.; Wu, J. X.; Xu, H.; Dong, F. L.; Lin, F. et al. Growth of large-area 2D MoS2(1-x)Se2x semiconductor alloys. Adv. Mater. 2014, 26, 2648-2653.
Crossref Google Scholar
5

Georgiou, T.; Jalil, R.; Belle, B. D.; Britnell, L.; Gorbachev, R. V.; Morozov, S. V.; Kim, Y. J.; Gholinia, A.; Haigh, S. J.; Makarovsky, O. et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 2013, 8, 100-103.
Crossref Google Scholar
6

Jo, S.; Ubrig, N.; Berger, H.; Kuzmenko, A. B.; Morpurgo, A. F. Mono- and bilayer WS2 light-emitting transistors. Nano Lett. 2014, 14, 2019-2025.
Crossref Google Scholar
7

Kim, S.; Konar, A.; Hwang, W. S.; Lee, J. H.; Lee, J.; Yang, J.; Jung, C.; Kim, H.; Yoo, J. B.; Choi, J. Y. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 2012, 3, 1011.
Crossref Google Scholar
8

Yoon, Y.; Ganapathi, K.; Salahuddin, S. How hood can monolayer MoS2 transistors be? Nano Lett. 2011, 11, 3768-3773.
Crossref Google Scholar
9

Pradhan, N. R.; Rhodes, D.; Feng, S. M.; Xin, Y.; Memaran, S.; Moon, B. -H.; Terrones, H.; Terrones, M.; Balicas, L. Field-effect transistors based on few-layered α-MoTe2. ACS Nano 2014, 8, 5911-5920.
Crossref Google Scholar
10

Radisavljevic, B.; Kis, A. Mobility engineering and a metal-insulator transition in monolayer MoS2. Nat. Mater. 2013, 12, 815-820.
Crossref Google Scholar
11

Yu, Z. H.; Pan, Y. M.; Shen, Y. T.; Wang, Z. L.; Ong, Z. -Y.; Xu, T.; Xin, R.; Pan, L. J.; Wang, B. G.; Sun, L. T. et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat. Commun. 2014, 5, 5290.
Crossref Google Scholar
12

Cui, Y.; Xin, R.; Yu, Z. H.; Pan, Y. M.; Ong, Z. Y.; Wei, X. X.; Wang, J. Z.; Nan, H. Y.; Ni, Z. H.; Wu, Y. et al. High-performance monolayer WS2 field-effect transistors on high-κ dielectrics. Adv. Mater. 2015, 27, 5230-5234.
Crossref Google Scholar
13

Ovchinnikov, D.; Allain, A.; Huang, Y. S.; Dumcenco, D.; Kis, A. Electrical transport properties of single-layer WS2. ACS Nano 2014, 8, 8174-8181.
Crossref Google Scholar
14

Kaasbjerg, K.; Thygesen, K. S.; Jacobsen, K. W. Phonon- limited mobility in n-type single-layer MoS2 from first principles. Phys. Rev. B 2012, 85, 115317.
Crossref Google Scholar
15

Fiori, G.; Bonaccorso, F.; Iannaccone, G.; Palacios, T.; Neumaier, D.; Seabaugh, A.; Banerjee, S. K.; Colombo, L. Electronics based on two-dimensional materials. Nat. Nanotechnol. 2014, 9, 768-779.
Crossref Google Scholar
16

Zhang, W. X.; Huang, Z. S.; Zhang, W. L.; Li, Y. R. Two-dimensional semiconductors with possible high room temperature mobility. Nano Res. 2014, 7, 1731-1737.
Crossref Google Scholar
17
Huang, Z. S.; Zhang, W. X.; Zhang, W. L.; Li, Y. R. Screening for two dimensional MX2 semiconductors with possible high room temperature mobility. 2015, arXiv: 1505.05698. arXiv. org e-Print archive. http://arxiv.org/abs/1505.05698 (accessed Feb 2, 2016).
18

Zhang, M.; Zhu, Y. M.; Wang, X. S.; Feng, Q. L.; Qiao, S. L.; Wen, W.; Chen, Y. F.; Cui, M. H.; Zhang, J.; Cai, C. Z. et al. Controlled synthesis of ZrS2 monolayer and few layers on hexagonal boron nitride. J. Am. Chem. Soc. 2015, 137, 7051-7054.
Crossref Google Scholar
19

Zhang, L. M.; Liu, K. H.; Wong, A. B.; Kim, J.; Hong, X. P.; Liu, C.; Cao, T.; Louie, S. G.; Wang, F.; Yang, P. D. Three-dimensional spirals of atomic layered MoS2. Nano Lett. 2014, 14, 6418-6423.
Crossref Google Scholar
20

Chen, L.; Liu, B. L.; Abbas, A. N.; Ma, Y. Q.; Fang, X.; Liu, Y. H.; Zhou, C. W. Screw-dislocation-driven growth of two-dimensional few-layer and pyramid-like WSe2 by sulfur- assisted chemical vapor deposition. ACS Nano 2014, 8, 11543-11551.
Crossref Google Scholar
21

Patel, S. G.; Arora, S. K.; Agarwal, M. K. CVT growth of zirconium sulphoselenide single crystals. Bull. Mater. Sci. 1998, 21, 297-301.
Crossref Google Scholar
22

Stacy, A. M.; Hodul, D. T. Raman spectra of IVB and VIB transition metal disulfides using laser energies near the absorption edges. J. Phys. Chem. Solids 1985, 46, 405-409.
Crossref Google Scholar
23

Roubi, L.; Carlone, C. Resonance Raman spectrum of HfS2 and ZrS2. Phys. Rev. B 1988, 37, 6808.
Crossref Google Scholar
24

Cao, Y.; Mishchenko, A.; Yu, G. L.; Khestanova, E.; Rooney, A. P.; Prestat, E.; Kretinin, A. V.; Blake, P.; Shalom, M. B.; Woods, C. et al. Quality heterostructures from two-dimensional crystals unstable in air by their assembly in inert atmosphere. Nano Lett. 2015, 15, 4914-4921.
Crossref Google Scholar
25

Tao, L.; Cinquanta, E.; Chiappe, D.; Grazianetti, C.; Fanciulli, M.; Dubey, M.; Molle, A.; Akinwande, D. Silicene field- effect transistors operating at room temperature. Nat. Nanotechnol. 2015, 10, 227-231.
Crossref Google Scholar
26

Kim, W.; Javey, A.; Vermesh, O.; Wang, Q.; Li, Y. M.; Dai, H. J. Hysteresis caused by water molecules in carbon nanotube field-effect transistors. Nano Lett. 2003, 3, 193-198.
Crossref Google Scholar
27

Late, D. J.; Liu, B.; Matte, H. S. S. R.; Dravid, V. P.; Rao, C. N. R. Hysteresis in single-layer MoS2 field effect transistors. ACS Nano 2012, 6, 5635-5641.
Crossref Google Scholar
28

Bao, W. Z.; Cai, X. H.; Kim, D.; Sridhara, K.; Fuhrer, M. S. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects. Appl. Phys. Lett. 2013, 102, 042104.
Crossref Google Scholar
29

Kalon, G.; Shin, Y. J.; Truong, V. G.; Kalitsov, A.; Yang, H. The role of charge traps in inducing hysteresis: Capacitance- voltage measurements on top gated bilayer graphene. Appl. Phys. Lett. 2011, 99, 083109.
Crossref Google Scholar
30

Joshi, P.; Romero, H. E.; Neal, A. T.; Toutam, V. K.; Tadigadapa, S. A. Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates. J. Phys. : Condens. Matter 2010, 22, 334214.
Crossref Google Scholar
31

Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron nitride substrates for high- quality graphene electronics. Nat. Nanotechnol. 2010, 5, 722-726.
Crossref Google Scholar
32

Punnoose, A.; Finkel'stein, A. M. Metal-insulator transition in disordered two-dimensional electron systems. Science 2005, 310, 289-291.
Crossref Google Scholar
33

Kaasbjerg, K.; Thygesen, K. S.; Jauho, A. P. Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles. Phys. Rev. B 2013, 87, 235312.
Crossref Google Scholar
34

Ma, N.; Jena, D. Charge scattering and mobility in atomically thin semiconductors. Phys. Rev. X 2014, 4, 011043.
Crossref Google Scholar
35

Zeng, L.; Xin, Z.; Chen, S. W.; Du, G.; Kang, J. F.; Liu, X. Y. Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2. Appl. Phys. Lett. 2013, 103, 113505.
Crossref Google Scholar
36

Konar, A.; Fang, T.; Jena, D. Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors. Phys. Rev. B 2010, 82, 115452.
Crossref Google Scholar
Nano Research
Volume 9 Issue 10,
October 2016
Pages 2931-2937
DOI: 10.1007/s12274-016-1178-7
Cite this article:
Zhu Y, Wang X, Zhang M, et al. Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride. Nano Research, 2016, 9(10): 2931-2937. https://doi.org/10.1007/s12274-016-1178-7

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Received: 14 April 2016
Revised: 12 June 2016
Accepted: 13 June 2016
Published: 20 July 2016
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016
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