Two-dimensional ZrS₂ materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS₂ multilayers that were directly deposited on hexagonal boron nitride (h-BN) by chemical vapor deposition. Hysteresis-free gate sweeping, metalinsulator transition, and T^–γ (γ ~ 0.82–1.26) temperature dependent mobility were observed in the ZrS₂ films.