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Research Article

Carbon nanotube network film-based ring oscillators with sub 10-ns propagation time and their applications in radio-frequency signal transmission

Yingjun Yang§Li Ding§Hengjia ChenJie HanZhiyong Zhang( )Lian-Mao Peng( )
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of ElectronicsPeking UniversityBeijing100871China

§ Yingjun Yang and Li Ding contributed equally to this work.

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Abstract

We have fabricated top-gated ambipolar field-effect transistors (FETs) based on solution-derived carbon nanotube (CNT) network films, and then constructed inverters and ring oscillators (ROs) that can work under supply voltages as low as 0.2 V owing to the high uniformity of the devices. Significant improvements were achieved in the performance of these CNT-based ambipolar FETs and CMOS-like circuits by scaling down the gate length of the CNT FETs and optimizing the device structure and RO layout. In particular, the optimized five-stage RO is shown to present a record high oscillation frequency of up to 17.4 MHz with a propagation time of 5.6 ns at a 12-V working voltage. The CNT film-based ROs were used as carrier-wave generators in radio-frequency systems to demonstrate a complete signal transmission process. These results suggest that CNT thin film-based FETs and integrated circuits may soon find their way to radio-frequency applications with a frequency band of 13.56 MHz.

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References

1

Cavin, R. K.; Lugli, P.; Zhirnov, V. V. Science and engineering beyond Moore's law. Proc. IEEE 2012, 100, 1720–1749.

2

Tulevski, G. S.; Franklin, A. D.; Frank, D.; Lobez, J. M.; Cao, Q.; Park, H.; Afzali, A.; Han, S. -J.; Hannon, J. B.; Haensch, W. Toward high-performance digital logic technology with carbon nanotubes. ACS Nano 2014, 8, 8730–8745.

3

Peng, L. -M.; Zhang, Z. Y.; Wang, S. Carbon nanotube electronics: Recent advances. Mater. Today 2014, 17, 433–442.

4

Franklin, A. D.; Chen, Z. H. Length scaling of carbon nanotube transistors. Nat. Nanotechnol. 2010, 5, 858–862.

5

Zhang, Z. Y.; Liang, X. L.; Wang, S.; Yao, K.; Hu, Y. F.; Zhu, Y. Z.; Chen, Q.; Zhou, W. W.; Li, Y.; Yao, Y. G. et al. Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits. Nano Lett. 2007, 7, 3603–3607.

6

Qiu, C. G.; Zhang, Z. Y.; Xiao, M. M.; Yang, Y. J.; Zhong, D. L.; Peng, L. -M. Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science 2017, 355, 271–276.

7

Park, S.; Vosguerichian, M.; Bao, Z. A review of fabrication and applications of carbon nanotube film-based flexible electronics. Nanoscale 2013, 5, 1727–1752.

8

Jin, S. H.; Shin, J.; Chao, I. -T.; Han, S. Y.; Lee, D. J.; Lee, C. H.; Lee, J. -H.; Rogers, J. A. Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics. Appl. Phys. Lett. 2014, 105, 013506.

9

Guo, J.; Hasan, S.; Javey, A.; Bosman, G.; Lundstrom, M. Assessment of high-frequency performance potential of carbon nanotube transistors. IEEE Trans. Nanotechnol. 2005, 4, 715–721.

10

Zhang, P. P.; Qiu, C. G.; Zhang, Z. Y.; Ding, L.; Chen, B. Y.; Peng, L. -M. Performance projections for ballistic carbon nanotube FinFET at circuit level. Nano Res. 2016, 9, 1785–1794.

11

Kang, S. J.; Kocabas, C.; Ozel, T.; Shim, M.; Pimparkar, N.; Alam, M. A.; Rotkin, S. V.; Rogers, J. A. High-performance electronics using dense, perfectly aligned arrays of singlewalled carbon nanotubes. Nat. Nanotechnol. 2007, 2, 230–236.

12

LeMieux, M. C.; Roberts, M.; Barman, S.; Jin, Y. W.; Kim, J. M.; Bao, Z. Self-sorted, aligned nanotube networks for thin-film transistors. Science 2008, 321, 101–104.

13

Cao, Q.; Han, S. J.; Tulevski, G. S.; Zhu, Y.; Lu, D. D.; Haensch, W. Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics. Nat. Nanotechnol. 2013, 8, 180–186.

14

Wu, J.; Antaris, A.; Gong, M.; Dai, H. J. Top-down patterning and self-assembly for regular arrays of semiconducting singlewalled carbon nanotubes. Adv. Mater. 2014, 26, 6151–6156.

15

Arnold, M. S.; Green, A. A.; Hulvat, J. F.; Stupp, S. I.; Hersam, M. C. Sorting carbon nanotubes by electronic structure using density differentiation. Nat. Nanotechnol. 2006, 1, 60–65.

16

Asada, Y.; Miyata, Y.; Ohno, Y.; Kitaura, R.; Sugai, T.; Mizutani, T.; Shinohara, H. High-performance thin-film transistors with DNA-assisted solution processing of isolated single-walled carbon nanotubes. Adv. Mater. 2010, 22, 2698–2701.

17

Wang, H. L.; Mei, J. G.; Liu, P.; Schmidt, K.; Jiménez-Osés, G.; Osuna, S.; Fang, L.; Tassone, C. J.; Zoombelt, A. P.; Sokolov, A. N. et al. Scalable and selective dispersion of semiconducting arc-discharged carbon nanotubes by dithiafulvalene/thiophene copolymers for thin film transistors. ACS Nano 2013, 7, 2659–2668.

18

Han, J.; Ji, Q. Y.; Qiu, S.; Li, H. B.; Zhang, S. X.; Jin, H. H.; Li, Q. W. A versatile approach to obtain a high-purity semiconducting single-walled carbon nanotube dispersion with conjugated polymers. Chem. Commun. 2015, 51, 4712–4714.

19

Gu, J. T.; Han, J.; Liu, D.; Yu, X. Q.; Kang, L. X.; Qiu, S.; Jin, H. H.; Li, H. B.; Li, Q. W.; Zhang, J. Solution-processable high-purity semiconducting SWCNTs for large-area fabrication of high-performance thin-film transistors. Small 2016, 12, 4993–4999.

20

Sun, D. -M.; Timmermans, M. Y.; Tian, Y.; Nasibulin, A. G.; Kauppinen, E. I.; Kishimoto, S.; Mizutani, T.; Ohno, Y. Flexible high-performance carbon nanotube integrated circuits. Nat. Nanotechnol. 2011, 6, 156–161.

21

Wang, C.; Zhang, J. L.; Ryu, K.; Badmaev, A.; De Arco, L. G.; Zhou, C. W. Wafer-scale fabrication of separated carbon nanotube thin-film transistors for display applications. Nano Lett. 2009, 9, 4285–4291.

22

Geier, M. L.; McMorrow, J. J.; Xu, W. C.; Zhu, J.; Kim, C. H.; Marks, T. J.; Hersam, M. C. Solution-processed carbon nanotube thin-film complementary static random access memory. Nat. Nanotechnol. 2015, 10, 944–949.

23

Sangwan, V. K.; Ortiz, R. P.; Alaboson, J. M. P.; Emergy, J. D.; Bedzyk, M. J.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. ACS Nano 2012, 6, 7480–7488.

24

Chen, B. Y.; Zhang, P. P.; Ding, L.; Han, J.; Qiu, S.; Li, Q. W.; Zhang, Z. Y.; Peng, L. -M. Highly uniform carbon nanotube field-effect transistors and medium scale integrated circuits. Nano Lett. 2016, 16, 5120–5128.

25

Cao, Q.; Kim, H. -S.; Pimparkar, N.; Kulkarni, J. P.; Wang, C. J.; Shim, M.; Roy, K.; Alam, M. A.; Rogers, J. A. Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates. Nature 2008, 454, 495–500.

26

Sun, D. -M.; Timmermans, M. Y.; Kaskela, A.; Nasibulin, A. G.; Kishimoto, S.; Mizutani, T.; Kauppinen, E. I.; Ohno, Y. Mouldable all-carbon integrated circuits. Nat. Commun. 2013, 4, 2302.

27

Wang, H.; Yu, L. L.; Lee, Y. -H.; Shi, Y. M.; Hsu, A.; Chin, M. L.; Li, L. -J.; Dubey, M.; Kong, J.; Palacios, T. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 2012, 12, 4674–4680.

28

Rizzi, L. G.; Bianchi, M.; Behnam, A.; Carrion, E.; Guerriero, E.; Polloni, L.; Pop, E.; Sordan, R. Cascading wafer-scale integrated graphene complementary inverters under ambient conditions. Nano Lett. 2012, 12, 3948–3953.

29

Guerriero, E.; Polloni, L.; Bianchi, M.; Behnam, A.; Carrion, E.; Rizzi, L. G.; Pop, E.; Sordan, R. Gigahertz integrated graphene ring oscillators. ACS Nano 2013, 7, 5588–5594.

30

Artukovic, E.; Kaempgen, M.; Hecht, D. S.; Roth, S.; Grüner, G. Transparent and flexible carbon nanotube transistors. Nano Lett. 2005, 5, 757–760.

31

Unalan, H. E.; Fanchini, G.; Kanwal, A.; Du Pasquier, A.; Chhowalla, M. Design criteria for transparent single-wall carbon nanotube thin-film transistors. Nano Lett. 2006, 6, 677–682.

32

Lau, P. H.; Takei, K.; Wang, C.; Ju, Y.; Kim, J.; Yu, Z. B.; Takahashi, T.; Cho, G.; Javey, A. Fully printed, high performance carbon nanotube thin-film transistors on flexible substrates. Nano Lett. 2013, 13, 3864–3869.

33

Mizutani, T.; Okigawa, Y.; Ono, Y.; Kishimoto, S.; Ohno, Y. Medium scale integrated circuits using carbon nanotube thin film transistors. Appl. Phys. Express 2010, 3, 115101.

34

Kim, B.; Jang, S.; Geier, M. L.; Prabhumirashi, P. L.; Hersam, M. C.; Dodabalapur, A. High-speed, inkjet-printed carbon nanotube/zinc tin oxide hybrid complementary ring oscillators. Nano Lett. 2014, 14, 3683–3687.

35

Ha, M. J.; Xia, Y.; Green, A. A.; Zhang, W.; Renn, M. J.; Kim, C. H.; Hersam, M. C.; Frisbie, C. D. Printed, sub-3 V digital circuits on plastic from aqueous carbon nanotube inks. ACS Nano 2010, 4, 4388–4395.

36

Ha, M. J.; Seo, J. -W. T.; Prabhumirashi, P. L.; Zhang, W.; Geier, M. L.; Renn, M. J.; Kim, C. H.; Hersam, M. C.; Frisbie, C. D. Aerosol jet printed, low voltage, electrolyte gated carbon nanotube ring oscillators with sub-5 μs stage delays. Nano Lett. 2013, 13, 954–960.

37

Chen, H. T.; Cao, Y.; Zhang, J. L.; Zhou, C. W. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors. Nat. Commun. 2014, 5, 4097.

38

Xu, W. W.; Liu, Z.; Zhao, J. W.; Xu, W. Y.; Gu, W. B.; Zhang, X.; Qian, L.; Cui, Z. Flexible logic circuits based on top-gate thin film transistors with printed semiconductor carbon nanotubes and top electrodes. Nanoscale 2014, 6, 14891–14897.

39

Yu, W. J.; Kim, U. J.; Kang, B. R.; Lee, I. H.; Lee, E-H.; Lee, Y. H. Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors. Nano Lett. 2009, 9, 1401–1405.

40

Derenskyi, V.; Gomulya, W.; Rios, J. M. S.; Fritsch, M.; Fröhlich, N.; Jung, S.; Allard, S.; Bisri, S. Z.; Gordiichuk, P.; Herrmann, A. et al. Carbon nanotube network ambipolar field-effect transistors with 108 on/off ratio. Adv. Mater. 2014, 26, 5969–5975.

41

Schießl, S. P.; Fröhlich, N.; Held, M.; Gannott, F.; Schweiger, M.; Forster, M.; Scherf, M.; Zaumseil, J. Polymer-sorted semiconducting carbon nanotube networks for highperformance ambipolar field-effect transistors. ACS Appl. Mater. Interfaces 2015, 7, 682–689.

42

Zhang, J. L.; Wang, C.; Fu, Y.; Che, Y. C.; Zhou, C. W. Air-stable conversion of separated carbon nanotube thin-film transistors from p-type to n-type using atomic layer deposition of high-κ oxide and its application in CMOS logic circuits. ACS Nano 2011, 5, 3284–3292.

Nano Research
Pages 300-310
Cite this article:
Yang Y, Ding L, Chen H, et al. Carbon nanotube network film-based ring oscillators with sub 10-ns propagation time and their applications in radio-frequency signal transmission. Nano Research, 2018, 11(1): 300-310. https://doi.org/10.1007/s12274-017-1632-1

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Received: 06 February 2017
Revised: 14 March 2017
Accepted: 16 April 2017
Published: 07 July 2017
© Tsinghua University Press and Springer-Verlag GmbH Germany 2017
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