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Research Article

Speeding up carbon nanotube integrated circuits through threedimensional architecture

Yunong Xie1,2, Zhiyong Zhang1( ), Donglai Zhong1, Lianmao Peng1,2( )
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics,Peking University,Beijing,100871,China;
Academy for Advanced Interdisciplinary Studies,Peking University,Beijing,100871,China;
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Abstract

Semiconducting carbon nanotube (CNT) field effect transistor (FET) is attractive for constructing three-dimensional (3D) integrated circuits (ICs) because of its low-temperature processes and low power dissipation. However, CNT based 3D ICs reported usually suffered from lower performance than that of monolayer CNT ICs. In this work, we develop a 3D IC technology through integrating multi-layer high performance CNT film FETs into one chip, and show that it promotes the operation speed of CNT based 3D ICs considerably. We also explore the advantage on ICs of 3D architecture, which brings 38% improvement on speed over two-dimensional (2D) one. Specially, we demonstrate the fabrication of 3D five-stage ring-oscillator circuits with an oscillation frequency of up to 680 MHz and stage delay of 0.15 ns, which represents the highest speed of 3D CNT-based ICs.

Keywords

carbon nanotubenanoelectronicsfield-effect transistorsthree-dimensional (3D) integrated circuitsring oscillator

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Nano Research
Volume 12 Issue 8,
August 2019
Pages 1810-1816
DOI: 10.1007/s12274-019-2436-2
Cite this article:
Xie Y, Zhang Z, Zhong D, et al. Speeding up carbon nanotube integrated circuits through threedimensional architecture. Nano Research, 2019, 12(8): 1810-1816. https://doi.org/10.1007/s12274-019-2436-2
Topics:
Field effect transistorsNanoelectronics Oscillators (electronic)Temperature

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Received: 24 April 2019
Revised: 14 May 2019
Accepted: 15 May 2019
Published: 13 June 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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