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Research Article

Magnetic logic inverter from crossed structures of defect-free graphene with large unsaturated room temperature negative magnetoresistance

Chao Feng1<, Junxiang Xiang1<, Ping Liu1<, Xiangqi Wang2, Jianlin Wang3, Guojing Hu1, Meng Huang1, Zhi Wang1, Zengming Zhang4, Yuan Liu5, Yalin Lu1,3( ), Bin Xiang1( )
Hefei National Research Center for Physical Sciences at the Microscale,Department of Materials Science&Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China,Hefei,230026,China;
Department of Physics,University of Science and Technology of China,Hefei,230026,China;
National Synchrotron Radiation Laboratory,CAS Center for Excellence in Nanoscience, University of Science and Technology of China,Hefei,230026,China;
The Centre for Physical Experiments,University of Science and Technology of China,Hefei,230026,China;
School of Physics and Electronics,Hunan University,Changsha,410082,China;

§ Chao Feng, Junxiang Xiang, and Ping Liu contributed equally to this work.

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Graphical Abstract

Abstract

Introducing defects into graphene has been widely utilized to realize the negative magnetoresistance (MR) effect in graphene. However, the reported graphene negative MR exhibits only ~ 10% under 10 T at room temperature to date, which extremely limits the resolution of future spintronics devices. Moreover, intentional defect introduction can also cause unintentional degradation in graphene's intrinsic properties. In this paper, we report a magnetic logic inverter based on a crossed structure of defect-free graphene, resulting in a substantial gain of 4.81 mV/T while exhibiting room temperature operation. This crossed structure of graphene shows large unsaturated room temperature negative MR with an enhancement of up to 1, 000% at 9 T. A transition behavior between negative and positive MR is observed in this crossed structure and the transition temperature can be tuned by a ratio of the conductivity between in-plane and out-of-plane transport. Our results open an intriguing path for future two-dimensional spintronics device applications.

Keywords

magnetic logic inverterdefect-free graphenenegative magnetoresistance

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Nano Research
Volume 12 Issue 10,
October 2019
Pages 2485-2489
DOI: 10.1007/s12274-019-2472-y
Cite this article:
Feng C, Xiang J, Liu P, et al. Magnetic logic inverter from crossed structures of defect-free graphene with large unsaturated room temperature negative magnetoresistance. Nano Research, 2019, 12(10): 2485-2489. https://doi.org/10.1007/s12274-019-2472-y
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Received: 15 April 2019
Revised: 12 June 2019
Accepted: 07 July 2019
Published: 03 August 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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