Recently, the coexistence of topology and superconductivity has garnered considerable attention. Specifically, the dimensionality of these materials is crucial for the realization of topological quantum computation. However, the naturally grown materials, especially with one-dimensional feature that exhibits the coexistence of topology and superconductivity, still face challenges in terms of experimental realization and scalability, which hinders the fundamental research development and the potential to revolutionize quantum computing. Here, we report the first experimental synthesis of quasi-one-dimensional InNbS₂ nanoribbons that exhibit the coexistence of topological order and superconductivity via a chemical vapor transport method. Especially, the in-plane upper critical field of InNbS₂ nanoribbons exceeds the Pauli paramagnetic limit by more than 2.2 times, which can be attributed to the enhanced spin-orbit coupling and the weakened interlayer interaction between the NbS₂ layers induced by the insertion of In atoms, making InNbS₂ exhibit spin-momentum locking similar to that of monolayer NbS₂. Moreover, for the first time, we report the superconducting diode effect in a quasi-one-dimensional superconductor system without any inherent geometric imperfections. The measured maximum efficiency is manifested as 14%, observed at μ₀H ≈ ±60 mT, and we propose that the superconducting diode effect can potentially be attributed to the presence of the nontrivial topological band. Our work provides a platform for studying exotic phenomena in condensed matter physics and potential applications in quantum computing and quantum information processing.

Recently discovered magnetic van der Waals (vdW) materials provide an ideal platform to explore low-dimensional magnetism and spin transport. Its vdW interaction nature opens up unprecedented opportunities to build vertically stacked heterostructures with novel properties and functionalities. By engineering the planar structure as an alternative degree of freedom, herein we demonstrate an antisymmetric magnetoresistance (MR) in a vdW Fe₃GeTe₂ flake with a step terrace that breaks the planar symmetry. This antisymmetric MR originates from a sign change of the anomalous Hall effect and the continuity of the current transport near the boundary of magnetic domains at the step edge. A repeatable domain wall due to the unsynchronized magnetization switching is responsible for this sign change. Such interpretation is supported by the observation of field-dependent domain switching, and the step thickness, temperature, and magnetic field orientation dependent MR. This work opens up new opportunities to encode magnetic information by controlling the planar domain structures in vdW magnets.

Introducing defects into graphene has been widely utilized to realize the negative magnetoresistance (MR) effect in graphene. However, the reported graphene negative MR exhibits only ~ 10% under 10 T at room temperature to date, which extremely limits the resolution of future spintronics devices. Moreover, intentional defect introduction can also cause unintentional degradation in graphene's intrinsic properties. In this paper, we report a magnetic logic inverter based on a crossed structure of defect-free graphene, resulting in a substantial gain of 4.81 mV/T while exhibiting room temperature operation. This crossed structure of graphene shows large unsaturated room temperature negative MR with an enhancement of up to 1, 000% at 9 T. A transition behavior between negative and positive MR is observed in this crossed structure and the transition temperature can be tuned by a ratio of the conductivity between in-plane and out-of-plane transport. Our results open an intriguing path for future two-dimensional spintronics device applications.