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Research Article

Au-catalysed free-standing wurtzite structured InAs nanosheets grown by molecular beam epitaxy

Qiang Sun1, Han Gao1, Xiaomei Yao1,2,3, Kun Zheng4, Pingping Chen2, Wei Lu2, Jin Zou1,5( )
Materials EngineeringThe University of Queensland, St LuciaQLD4072Australia
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of Sciences, 500 Yutian RoadShanghai200083China
University of Chinese Academy of SciencesNo.19A Yuquan RoadBeijing100049China
Institute of Microstructure and Properties of Advanced MaterialsBeijing University of TechnologyBeijing100124China
Centre for Microscopy and MicroanalysisThe University of Queensland, St LuciaQLD4072Australia
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Abstract

In this study, we report the growth of free-standing InAs nanosheets using Au catalysts in molecular beam epitaxy. Detailed structural characterizations suggest that wurtzite structured InAs nanosheets, with features of extensive {1120} surfaces, grown along the < 1102 > direction and adopted {0001} nanosheet/catalyst interfaces, are initiated from wurtzite structured [0001] nanowires as the inclined epitaxial growth due to relatively higher In concentrations in Au catalysts, and grown from these inclined nanostructures through catalyst-induced axial growth and their enhanced lateral growth under the high growth temperature. Based on the facts that the nanosheets contain large low energy {1120} surfaces and {0001} nanosheet/catalyst interfaces, the growth of our nanosheets is a thermodynamically driven process. This study provides new insights into fabricating free-standing Ⅲ-Ⅴ nanosheets for their applications in future nanoscale devices.

Keywords

InAs nanosheetwurtzite structurecatalyst supersaturationmolecular beam epitaxy

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Nano Research
Volume 12 Issue 11,
November 2019
Pages 2718-2722
DOI: 10.1007/s12274-019-2504-7
Cite this article:
Sun Q, Gao H, Yao X, et al. Au-catalysed free-standing wurtzite structured InAs nanosheets grown by molecular beam epitaxy. Nano Research, 2019, 12(11): 2718-2722. https://doi.org/10.1007/s12274-019-2504-7
Topics:
Arsenicc ompoundsGoldIIIIndium arsenideNanocatalystsV semiconductorsZinc sulfide

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Received: 25 June 2019
Revised: 02 August 2019
Accepted: 15 August 2019
Published: 27 August 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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