In this study, we demonstrate the axiotaxy driven growth of belt-shaped InAs nanowires using Au catalysts by molecular beam epitaxy. It is found that, the zinc-blende structured InAs nanowires, with the features of [ $\overline{1}\overline{1}\overline{3}$] growth direction and extensive { $1\overline{1}0$} side-surfaces, are induced by catalysts in Au-In αphase through the axiotaxy growth, in which the lattice mismatch between the projections of atomic planes onto nanowire/catalyst interfaces is minimized by forming extraordinary tilted interfaces. Our atomic-resolution in situ TEM heating experiments show that the catalysts remained in the solid state of Au-In αphase during the axiotaxy growth, by which the vapor-solid-solid growth mechanism can be confirmed. Through manipulating the growth direction, this unusual growth mechanism can provide a practical pathway to control the morphology of the low-dimensional nanomaterials, from conventional nanowires to belt-shaped nanowires utilizing a significant lateral growth, simply using nanoparticles as catalyst.

In this study, we report the growth of free-standing InAs nanosheets using Au catalysts in molecular beam epitaxy. Detailed structural characterizations suggest that wurtzite structured InAs nanosheets, with features of extensive {1120} surfaces, grown along the < 1102 > direction and adopted {0001} nanosheet/catalyst interfaces, are initiated from wurtzite structured [0001] nanowires as the inclined epitaxial growth due to relatively higher In concentrations in Au catalysts, and grown from these inclined nanostructures through catalyst-induced axial growth and their enhanced lateral growth under the high growth temperature. Based on the facts that the nanosheets contain large low energy {1120} surfaces and {0001} nanosheet/catalyst interfaces, the growth of our nanosheets is a thermodynamically driven process. This study provides new insights into fabricating free-standing Ⅲ-Ⅴ nanosheets for their applications in future nanoscale devices.

Identification of atomic disorders and their subsequent control has proven to be a key issue in predicting, understanding, and enhancing the properties of newly emerging topological insulator materials. Here, we demonstrate direct evidence of the cation antisites in single-crystal SnBi₂Te₄ nanoplates grown by chemical vapor deposition, through a combination of sub-ångström-resolution imaging, quantitative image simulations, and density functional theory calculations. The results of these combined techniques revealed a recognizable amount of cation antisites between Bi and Sn, and energetic calculations revealed that such cation antisites have a low formation energy. The impact of the cation antisites was also investigated by electronic structure calculations together with transport measurement. The topological surface properties of the nanoplates were further probed by angle-dependent magnetotransport, and from the results, we observed a two-dimensional weak antilocalization effect associated with surface carriers. Our approach provides a pathway to identify the antisite defects in ternary chalcogenides and the application potential of SnBi₂Te₄ nanostructures in next-generation electronic and spintronic devices.

In this study, leaf-like one-dimensional InAs nanostructures were grown by the metal–organic chemical vapor deposition method. Detailed structural characterization suggests that the nanoleaves contain relatively low-energy {122} or {133} mirror twins acting as their midribs and narrow sections connecting the nanoleaves and their underlying bases as petioles. Importantly, the mirror twins lead to identical lateral growth of the twinned structures in terms of crystallography and polarity, which is essential for the formation of lateral symmetrical nanoleaves. It has been found that the formation of nanoleaves is driven by catalyst energy minimization. This study provides a biomimic of leaf found in nature by fabricating a semiconductor nanoleaf.

A method of controlling the morphology of SnTe nanostructures produced by a simple chemical vapor deposition is presented, in which Au-containing catalysts with different Au concentrations are used to induce specific growth behavior. Triangular SnTe nanoplates with a {100} dominated surface and {100}, {111} and {120} side facets were induced by AuSn catalysts, whereas < 010 > SnTe nanowires with four nonpolar {100} side-facets were produced using Au₅Sn catalysts. Through detailed structural and chemical characterization, coupled with surface energy calculations, it is found that nanowire growth is thermodynamically controlled via a vapor-solid-solid growth mechanism, whereas nanoplate growth is kinetically controlled via a vapor-liquid-solid growth mechanism. Therefore, this study provides a fundamental understanding of the catalyst's role in the growth of Ⅳ-Ⅵ compound nanostructures.

In this study, the structure and quality controlled growth of InAs nanowires using Au catalysts in a molecular beam epitaxy reactor is presented. By tuning the indium concentration in the catalyst, defect-free wurtzite structure and defect-free zinc blende structure InAs nanowires can be induced. It is found that these defect-free zinc blende structure InAs nanowires grow along < 110> directions with four low-energy {111} and two {110} side-wall facets and adopt the (111) catalyst/nanowire interface. Our structural and chemical characterization and calculations identify the existence of a catalyst supersaturation threshold for the InAs nanowire growth. When the In concentration in the catalyst is sufficiently high, defect-free zinc blende structure InAs nanowires can be induced. This study provides an insight into the manipulation of crystal structure and structure quality of Ⅲ-Ⅴ semiconductor nanowires through catalyst engineering.