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Research Article

Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage

Lijun Liu, Chenyi Zhao, Li Ding, Lianmao Peng(), Zhiyong Zhang()
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
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Abstract

A small bandgap and light carrier effective mass (m0) lead to obvious ambipolar transport behavior in carbon nanotube (CNT) field-effect transistors (FETs), including a high off-state current and severe degradation of the subthreshold swing (SS) with increasing drain bias voltage. We demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-μm channel length, i.e., suppressing the ambipolar behavior while maintaining high on-state performance by adopting a feedback gate (FBG) structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling current. Sub-400-nm-channel-length FETs with a FBG structure statistically present a high on/off ratio of up to 104 and a sub-200 mV/dec SS under a high drain bias of up to -2 V while maintaining a high on-state current of 0.2 mA/μm or a peak transconductance of 0.2 mS/μm. By lowering the supply voltage to 1.5 V, FBG CNT-film FETs can meet the requirement of standard-performance ultra large scale integrated circuits (ULSICs). Therefore, the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property.

Keywords

carbon nanotubefield-effect transistorcurrent leakagesubthreshold swingsmall bandgap semiconductor

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Nano Research
Volume 13 Issue 7,
July 2020
Pages 1875-1881
DOI: 10.1007/s12274-019-2558-6
Cite this article:
Liu L, Zhao C, Ding L, et al. Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage. Nano Research, 2020, 13(7): 1875-1881. https://doi.org/10.1007/s12274-019-2558-6
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Energy gapULSI circuits
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