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Research Article

Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage

Lijun Liu, Chenyi Zhao, Li Ding, Lianmao Peng( ), Zhiyong Zhang( )
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
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Abstract

A small bandgap and light carrier effective mass (m0) lead to obvious ambipolar transport behavior in carbon nanotube (CNT) field-effect transistors (FETs), including a high off-state current and severe degradation of the subthreshold swing (SS) with increasing drain bias voltage. We demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-μm channel length, i.e., suppressing the ambipolar behavior while maintaining high on-state performance by adopting a feedback gate (FBG) structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling current. Sub-400-nm-channel-length FETs with a FBG structure statistically present a high on/off ratio of up to 104 and a sub-200 mV/dec SS under a high drain bias of up to -2 V while maintaining a high on-state current of 0.2 mA/μm or a peak transconductance of 0.2 mS/μm. By lowering the supply voltage to 1.5 V, FBG CNT-film FETs can meet the requirement of standard-performance ultra large scale integrated circuits (ULSICs). Therefore, the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property.

Keywords

carbon nanotubefield-effect transistorcurrent leakagesubthreshold swingsmall bandgap semiconductor

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Nano Research
Volume 13 Issue 7,
July 2020
Pages 1875-1881
DOI: 10.1007/s12274-019-2558-6
Cite this article:
Liu L, Zhao C, Ding L, et al. Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage. Nano Research, 2020, 13(7): 1875-1881. https://doi.org/10.1007/s12274-019-2558-6
Topics:
Energy gapULSI circuits
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Sixth Nano Research Award

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Received: 18 September 2019
Revised: 16 October 2019
Accepted: 31 October 2019
Published: 16 November 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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