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Research Article

InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Liangmei Wu1,2,§, Jinan Shi2,§, Zhang Zhou1,2, Jiahao Yan1,2, Aiwei Wang1,2, Ce Bian1,2, Jiajun Ma1,2, Ruisong Ma1,2, Hongtao Liu1,2, Jiancui Chen1,2, Yuan Huang1, Wu Zhou2( ), Lihong Bao1,2,3( ), Min Ouyang4, Sokrates T. Pantelides5, Hong-Jun Gao1,2,3
Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China
University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Songshan Lake Materials Laboratory, Dongguan 523808, China
Department of Physics, University of Maryland, MD 20742, USA
Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA

§ Liangmei Wu and Jinan Shi contributed equally to this work.

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Graphical Abstract

Abstract

Two-dimensional (2D) materials as channel materials provide a promising alternative route for future electronics and flexible electronics, but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric. Here we demonstrate an indium selenide (InSe)/hexagonal boron nitride (hBN)/graphite heterostructure as a 2D field-effect transistor (FET), with InSe as channel material, hBN as dielectric, and graphite as gate. The fabricated FETs feature high electron mobility up to 1,146 cm2·V-1·s-1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric. Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained. Taking advantages of the mechanical flexibility of these materials, we integrated the heterostructured InSe FET on a flexible substrate, exhibiting little modification of device performance at a high strain level of up to 2%. Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.

Keywords

InSevan der Waals heterostruture2D electronicsflexible electronics

Electronic Supplementary Material

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Nano Research
Volume 13 Issue 4,
April 2020
Pages 1127-1132
DOI: 10.1007/s12274-020-2757-1
Cite this article:
Wu L, Shi J, Zhou Z, et al. InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics. Nano Research, 2020, 13(4): 1127-1132. https://doi.org/10.1007/s12274-020-2757-1
Topics:
Boron compoundsField effect transistorsIIIIndium compoundsSelenium compoundsV semiconductors

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Received: 12 February 2020
Revised: 12 March 2020
Accepted: 13 March 2020
Published: 17 April 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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