The emergence of superconducting diode effect (SDE) provides a new platform to investigate the intertwining among band topology, superconductivity, and magnetism, thereby establishing the foundation for achieving ultra-low dissipation devices and circuits. The realization of the tunable zero-field SDE in two-dimension (2D) devices is significant for 2D circuits, however, there has been great challenges in the appropriate materials synergy and fine device design. Here, we report a zero-field SDE in the van der Waals (vdW) heterostructure constructed by the Ising superconducting NbSe₂ and ferromagnetic Fe₃GeTe₂ with a large perpendicular magnetic anisotropy. Based on the valley-Zeeman spin-orbit interaction (SOI) in NbSe₂, the magnitude and polarity of the zero-field SDE can be modulated by altering the ferromagnetic properties of Fe₃GeTe₂ through the application of pre-magnetized out-of-plane magnetic fields. Furthermore, the stable half-wave rectification of square-wave currents is achieved by utilizing the tunable zero-field SDE in the Josephson junction-free structure. The tunable zero-field SDE in 2D heterostructures brings new opportunities for understanding the coexistence of superconductivity and time-reversal symmetry breaking, and for fabricating 2D ultra-low dissipation circuits.

Ferroelectric field-effect transistors (FeFET) with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology. Herein, we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS₂ with ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films. The ReS₂ FeFET using hBN as substrate shows a large memory window of ~ 30 V. Repeated write/erase operations are successfully performed by applying pulse voltage of ±25 V with 1 ms width to the ferroelectric P(VDF-TrFE), and an ultra-high write/erase ratio of ~ 10⁷ can be achieved. Furthermore, the ReS₂ FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles. These characteristics highlight that such ferroelectric-gated nonvolatile memory has great potential in future non-volatile memory applications.

Two-dimensional (2D) materials as channel materials provide a promising alternative route for future electronics and flexible electronics, but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric. Here we demonstrate an indium selenide (InSe)/hexagonal boron nitride (hBN)/graphite heterostructure as a 2D field-effect transistor (FET), with InSe as channel material, hBN as dielectric, and graphite as gate. The fabricated FETs feature high electron mobility up to 1,146 cm²·V^-1·s^-1 at room temperature and on/off ratio up to 10¹⁰ due to the atomically flat gate dielectric. Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained. Taking advantages of the mechanical flexibility of these materials, we integrated the heterostructured InSe FET on a flexible substrate, exhibiting little modification of device performance at a high strain level of up to 2%. Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.