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Research Article

Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions

Xu Zhao1,§( ), Peng Chen1,2,§, Xingqiang Liu2( ), Guoli Li2, Xuming Zou2, Yuan Liu2, Qilong Wu2, Yufang Liu1( ), Woo Jong Yu3, Lei Liao2
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Changsha 410082, China
Henan Normal University, School of Physics, Xinxiang 453007, China
Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea

§ Xu Zhao and Peng Chen contributed equally to this work.

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An erratum to this article is available online at:
https://doi.org/10.1007/s12274-020-2875-9

Graphical Abstract

Abstract

Due to the backscattered parasitic current from the barriers, the current gain of the widely used amplifier is far from ideal. In this work, we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector barrier. Fairly monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling, which are accelerated and shifted to the collector region. The devices exhibit a high current on-off ratio of > 105 and a high current density (JC) of ~ 1,000 A/cm2 at the same time. Notably, this work demonstrates a common-emitter current gain (β) value of 1,384 with a nanowatt power consumption at room temperature, which is a record high value among the all 2D based hot-electron transistors. Furthermore, the temperature dependent performance is investigated, and the β value of 1,613 is obtained at 150 K. Therefore, this work presents the potential of 2D based transistors for high-performance applications.

Keywords

bipolar junction transistorhot electronvan der Waals heterostructurecurrent gain

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Nano Research
Volume 13 Issue 8,
August 2020
Pages 2085-2090
DOI: 10.1007/s12274-020-2814-9
Cite this article:
Zhao X, Chen P, Liu X, et al. Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions. Nano Research, 2020, 13(8): 2085-2090. https://doi.org/10.1007/s12274-020-2814-9
Topics:
Aluminum OxideElectron transitions HeterojunctionsOxidesVan der Waals forces

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Received: 20 March 2020
Revised: 13 April 2020
Accepted: 16 April 2020
Published: 05 August 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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