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Erratum

Erratum to: Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions

Xu Zhao1,§( ), Peng Chen1,2,§, Xingqiang Liu2( ), Guoli Li2, Xuming Zou2, Yuan Liu2, Qilong Wu2, Yufang Liu1( ), Woo Jong Yu3, Lei Liao2
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Changsha 410082, China
Henan Normal University, School of Physics, Xinxiang 453007, China
Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea

§ Xu Zhao and Peng Chen contributed equally to this work.

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The online version of the original article can be found at:
https://doi.org/10.1007/s12274-020-2814-9

Keywords

bipolar junction transistorhot electronvan der Waals heterostructurecurrent gain
Nano Research
Volume 13 Issue 8,
August 2020
Pages 2308-2308
DOI: 10.1007/s12274-020-2875-9
Cite this article:
Zhao X, Chen P, Liu X, et al. Erratum to: Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions. Nano Research, 2020, 13(8): 2308. https://doi.org/10.1007/s12274-020-2875-9

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Published: 05 August 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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