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Research Article

Field-effect at electrical contacts to two-dimensional materials

Yao Guo1,2( ), Yan Sun1, Alvin Tang2, Ching-Hua Wang2, Yanqing Zhao1, Mengmeng Bai1, Shuting Xu1, Zheqi Xu1, Tao Tang3, Sheng Wang4, Chenguang Qiu4, Kang Xu5, Xubiao Peng1, Junfeng Han1, Eric Pop2, Yang Chai5( )
School of Physics Beijing Institute of Technology Beijing 100081 China
Department of Electrical Engineering and Stanford SystemX Alliance Stanford University StanfordCA 94305 USA
Advanced Manufacturing EDA Co. Ltd.Shanghai 201204 China
Key Laboratory for the Physics and Chemistry of Nanodevices Department of Electronics Peking University Beijing 100871 China
Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong China
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An erratum to this article is available online at:
https://doi.org/10.1007/s12274-021-3842-9

Graphical Abstract

Abstract

The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large- scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as contact resistance. With a systematic investigation, this work demonstrates a capacitive metal-insulator-semiconductor (MIS) field-effect at the electrical contacts to 2D materials: The field-effect depletes or accumulates charge carriers, redistributes the voltage potential, and gives rise to abnormal current saturation and nonlinearity. On one hand, the current saturation hinders the devices' driving ability, which can be eliminated with carefully engineered contact configurations. On the other hand, by introducing the nonlinearity to monolithic analog artificial neural network circuits, the circuits' perception ability can be significantly enhanced, as evidenced using a coronavirus disease 2019 (COVID-19) critical illness prediction model. This work provides a comprehension of the field-effect at the electrical contacts to 2D materials, which is fundamental to the design, simulation, and fabrication of electronics based on 2D materials.

Keywords

field-effectelectrical contacttwo-dimensional materialsnonlinearityin-memory-computing

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Nano Research
Volume 14 Issue 12,
December 2021
Pages 4894-4900
DOI: 10.1007/s12274-021-3670-y
Cite this article:
Guo Y, Sun Y, Tang A, et al. Field-effect at electrical contacts to two-dimensional materials. Nano Research, 2021, 14(12): 4894-4900. https://doi.org/10.1007/s12274-021-3670-y
Topics:
Field effect transistors

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Received: 30 March 2021
Revised: 04 June 2021
Accepted: 09 June 2021
Published: 28 July 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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