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Erratum

Erratum to: Field-effect at electrical contacts to two-dimensional materials

Yao Guo1,2(), Yan Sun1, Alvin Tang2, Ching-Hua Wang2, Yanqing Zhao1, Mengmeng Bai1, Shuting Xu1, Zheqi Xu1, Tao Tang3, Sheng Wang4, Chenguang Qiu4, Kang Xu5, Xubiao Peng1, Junfeng Han1, Eric Pop2, Yang Chai5()
School of Physics Beijing Institute of Technology Beijing 100081 China
Department of Electrical Engineering and Stanford SystemX Alliance Stanford University StanfordCA 94305 USA
Advanced Manufacturing EDA Co. Ltd.Shanghai 201204 China
Key Laboratory for the Physics and Chemistry of Nanodevices Department of Electronics Peking University Beijing 100871 China
Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong China
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The online version of the original article can be found at:
https://doi.org/10.1007/s12274-021-3670-y

Keywords

field-effectelectrical contacttwo-dimensional materialsnonlinearityin-memory-computing
Nano Research
Volume 14 Issue 12,
December 2021
Pages 4903-4903
DOI: 10.1007/s12274-021-3842-9
Cite this article:
Guo Y, Sun Y, Tang A, et al. Erratum to: Field-effect at electrical contacts to two-dimensional materials. Nano Research, 2021, 14(12): 4903. https://doi.org/10.1007/s12274-021-3842-9
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