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Research Article

Planar-symmetry-breaking induced antisymmetric magnetoresistance in van der Waals ferromagnet Fe3GeTe2

Ping Liu1,2, Caixing Liu3, Zhi Wang1, Meng Huang1, Guojing Hu1, Junxiang Xiang1, Chao Feng1, Chen Chen1, Zongwei Ma3, Xudong Cui4, Hualing Zeng1, Zhigao Sheng3( ), Yalin Lu1,5( ), Gen Yin6, Gong Chen6( ), Kai Liu6, Bin Xiang1,5( )
Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
Sichuan New Materials Research Center, Institute of Chemical Materials, CAEP, Chengdu 610200, China
Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
Physics Department, Georgetown University, Washington, DC 20057, USA
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Graphical Abstract

Abstract

Recently discovered magnetic van der Waals (vdW) materials provide an ideal platform to explore low-dimensional magnetism and spin transport. Its vdW interaction nature opens up unprecedented opportunities to build vertically stacked heterostructures with novel properties and functionalities. By engineering the planar structure as an alternative degree of freedom, herein we demonstrate an antisymmetric magnetoresistance (MR) in a vdW Fe3GeTe2 flake with a step terrace that breaks the planar symmetry. This antisymmetric MR originates from a sign change of the anomalous Hall effect and the continuity of the current transport near the boundary of magnetic domains at the step edge. A repeatable domain wall due to the unsynchronized magnetization switching is responsible for this sign change. Such interpretation is supported by the observation of field-dependent domain switching, and the step thickness, temperature, and magnetic field orientation dependent MR. This work opens up new opportunities to encode magnetic information by controlling the planar domain structures in vdW magnets.

Keywords

2D magnetismFe3GeTe2planar structure engineeringantisymmetric magnetoresistance

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Nano Research
Volume 15 Issue 3,
March 2022
Pages 2531-2536
DOI: 10.1007/s12274-021-3826-9
Cite this article:
Liu P, Liu C, Wang Z, et al. Planar-symmetry-breaking induced antisymmetric magnetoresistance in van der Waals ferromagnet Fe3GeTe2. Nano Research, 2022, 15(3): 2531-2536. https://doi.org/10.1007/s12274-021-3826-9
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Received: 30 June 2021
Revised: 15 August 2021
Accepted: 18 August 2021
Published: 30 September 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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