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Research Article

Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory

Li Liu1,2, Hao Wang2, Qilong Wu1, Kang Wu2, Yuan Tian1, Haitao Yang2, Cheng Min Shen2,3, Lihong Bao2,3( ), Zhihui Qin1( ), Hong-Jun Gao2,3
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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Graphical Abstract

Ferroelectric-gated ReS2 field-effect transistor possesses high write/erase ratios of over 107, robustretention characteristics of longer than 2,000 s, reliable endurance performance greater than 2,000cycles, performed by continuous write and erase operations with 1 ms pulses of ±25 V amplitudes.Furthermore, the measured performances of the device have negligible changes after 10 days.

Abstract

Ferroelectric field-effect transistors (FeFET) with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology. Herein, we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS2 with ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films. The ReS2 FeFET using hBN as substrate shows a large memory window of ~ 30 V. Repeated write/erase operations are successfully performed by applying pulse voltage of ±25 V with 1 ms width to the ferroelectric P(VDF-TrFE), and an ultra-high write/erase ratio of ~ 107 can be achieved. Furthermore, the ReS2 FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles. These characteristics highlight that such ferroelectric-gated nonvolatile memory has great potential in future non-volatile memory applications.

Keywords

Ferroelectricnonvolatile memorypoly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))ReS2

Electronic Supplementary Material

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Nano Research
Volume 15 Issue 6,
June 2022
Pages 5443-5449
DOI: 10.1007/s12274-022-4142-8
Cite this article:
Liu L, Wang H, Wu Q, et al. Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory. Nano Research, 2022, 15(6): 5443-5449. https://doi.org/10.1007/s12274-022-4142-8
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Received: 18 October 2021
Revised: 29 December 2021
Accepted: 10 January 2022
Published: 29 March 2022
© Tsinghua University Press 2022
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