Home Nano Research Article
Article Link
Cite
EndNote(RIS) BibTeX
Collect
Submit Manuscript
Show Outline
Outline
Graphical Abstract
Abstract
Keywords
Electronic Supplementary Material
References
Show full outline
Hide outline
Research Article

Multi-stage anisotropic etching of two-dimensional heterostructures

Lin Li1, Jichen Dong2, Dechao Geng3,4(), Menghan Li1, Wei Fu5, Feng Ding4, Wenping Hu4, Hui Ying Yang3 ()
Institute of Molecular Plus, Tianjin University, Tianjin 300072, China
Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea
Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore 487372, Singapore
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A* STAR), Singapore 138634, Singapore
Show Author Information
An erratum to this article is available online at:
https://doi.org/10.1007/s12274-022-4387-2

Graphical Abstract

View original image Download original image
Novel etching mode entitled as multi-stage etching has been demonstrated onto the two-dimensional(2D) heterostructures on liquid Cu surface by chemical vapor deposition method. With aid of themulti-stage etching process, formation of 2D heterostructures arrays with controlled size andmorphology has been realized.

Abstract

Regarding the reverse process of materials growth, etching has been widely concerned to indirectly probe the growth kinetics, offering an avenue in governing the growth of two-dimensional (2D) materials. In this work, interface-driven anisotropic etching mode is demonstrated for the first time to be generally applied to 2D heterostructures. It is shown that the typical in-plane graphene and hexagonal boron nitride (h-BN) heterostructures follow a multi-stage etching behavior initiated first along the interfacial region between the two materials and then along edges of neighboring h-BN flakes and finally along central edges of h-BN. By accurately tuning etching conditions in the chemical vapor deposition process, series of etched 2D heterostructure patterns are controllably produced. Furthermore, scaled formation of graphene and h-BN heterostructures arrays has been realized with full assist of as-proposed etching mechanism, offering a direct top-down method to make 2D orientated heterostructures with order and complexity. Detection of interface-driven multi-staged anisotropic etching mode will shed light on understanding growth mechanism and further expanding wide applications of 2D heterostructures.

Keywords

anisotropic etchingtwo-dimensional materialsheterostructuresgrapheneh-BN

Electronic Supplementary Material

Download File(s)
12274_2022_4193_MOESM1_ESM.pdf (1 MB)

References

1

Munkhbat, B.; Yankovich, A. B.; Baranov, D. G.; Verre, R.; Olsson, E.; Shegai, T. O. Transition metal dichalcogenide metamaterials with atomic precision. Nat. Commun. 2020, 11, 4604.

Crossref Google Scholar
2

Jessen, B. S.; Gammelgaard, L.; Thomsen, M. R.; Mackenzie, D. M. A.; Thomsen, J. D.; Caridad, J. M.; Duegaard, E.; Watanabe, K.; Taniguchi, T.; Booth, T. J. et al. Lithographic band structure engineering of graphene. Nat. Nanotechnol. 2019, 14, 340–346.

Crossref Google Scholar
3

Geng, D. C.; Wang, H. P.; Wan, Y.; Xu, Z. P.; Luo, B. R.; Xu, J.; Yu, G. Direct top-down fabrication of large-area graphene arrays by an in situ etching method. Adv. Mater. 2015, 27, 4195–4199.

Crossref Google Scholar
4

Ma, T.; Ren, W. C.; Liu, Z. B.; Huang, L.; Ma, L. P.; Ma, X. L.; Zhang, Z. Y.; Peng, L. M.; Cheng, H. M. Repeated growth-etching-regrowth for large-area defect-free single-crystal graphene by chemical vapor deposition. ACS Nano 2014, 8, 12806–12813.

Crossref Google Scholar
5

Grau-Carbonell, A.; Sadighikia, S.; Welling, T. A. J.; Van Dijk-Moes, R. J. A.; Kotni, R.; Bransen, M.; Van Blaaderen, A.; Van Huis, M. A. In situ study of the wet chemical etching of SiO2 and nanoparticle@SiO2 core–shell nanospheres. ACS Appl. Nano Mater. 2021, 4, 1136–1148.

Crossref Google Scholar
6

Luo, B. R.; Gao, E. L.; Geng, D. C.; Wang, H. P.; Xu, Z. P.; Yu, G. Etching-controlled growth of graphene by chemical vapor deposition. Chem. Mater. 2017, 29, 1022–1027.

Crossref Google Scholar
7

Zhang, Y.; Li, Z.; Kim, P.; Zhang, L. Y.; Zhou, C. W. Anisotropic hydrogen etching of chemical vapor deposited graphene. ACS Nano 2012, 6, 126–132.

Crossref Google Scholar
8

Geng, D. C.; Wu, B.; Guo, Y. L.; Luo, B. R.; Xue, Y. Z.; Chen, J. Y.; Yu, G.; Liu, Y. Q. Fractal etching of graphene. J. Am. Chem. Soc. 2013, 135, 6431–6434.

Crossref Google Scholar
9

Sun, H. B.; Dong, J. C.; Liu, F. N.; Ding, F. Etching of two-dimensional materials. Mater. Today 2021, 42, 192–213.

Crossref Google Scholar
10

Gibertini, M.; Koperski, M.; Morpurgo, A. F.; Novoselov, K. S. Magnetic 2D materials and heterostructures. Nat. Nanotechnol. 2019, 14, 408–419.

Crossref Google Scholar
11

Paul, K. K.; Kim, J. H.; Lee, Y. H. Hot carrier photovoltaics in van der Waals heterostructures. Nat. Rev. Phys. 2021, 3, 178–192.

Crossref Google Scholar
12

Liu, Y. P.; Zhang, S. Y.; He, J.; Wang, Z. M. M.; Liu, Z. W. Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials. Nano-Micro Lett. 2019, 11, 13.

Crossref Google Scholar
13

Ma, B. J.; Ren, S. Z.; Wang, P. Q.; Jia, C. C.; Guo, X. F. Precise control of graphene etching by remote hydrogen plasma. Nano Res. 2019, 12, 137–142.

Crossref Google Scholar
14

Wang, L. F.; Wu, B.; Jiang, L. L.; Chen, J. S.; Li, Y. T.; Guo, W.; Hu, P. A.; Liu, Y. Q. Growth and etching of monolayer hexagonal boron nitride. Adv. Mater. 2015, 27, 4858–4864.

Crossref Google Scholar
15

Stehle, Y. Y.; Sang, X. H.; Unocic, R. R.; Voylov, D.; Jackson, R. K.; Smirnov, S.; Vlassiouk, I. Anisotropic etching of hexagonal boron nitride and graphene: Question of edge terminations. Nano Lett. 2017, 17, 7306–7314.

Crossref Google Scholar
16

Geng, D. C.; Dong, J. C.; Ang, L. K.; Ding, F.; Yang, H. Y. In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains. NPG Asia Mater. 2019, 11, 56.

Crossref Google Scholar
17

Guo, W.; Jing, F.; Xiao, J.; Zhou, C.; Lin, Y. W.; Wang, S. Oxidative-etching-assisted synthesis of centimeter-sized single-crystalline graphene. Adv. Mater. 2016, 28, 3152–3158.

Crossref Google Scholar
18

Li, X. F.; Dong, J. C.; Idrobo, J. C.; Puretzky, A. A.; Rouleau, C. M.; Geohegan, D. B.; Ding, F.; Xiao, K. Edge-controlled growth and etching of two-dimensional GaSe monolayers. J. Am. Chem. Soc. 2017, 139, 482–491.

Crossref Google Scholar
19

Zhao, Z. J.; Chen, X. P.; Zhang, C. K.; Wan, W.; Shan, Z. F.; Tian, B.; Li, Q. Y.; Ying, H.; Zhuang, P. P.; Kaner, R. B. et al. An etching phenomenon exhibited by chemical vapor deposited graphene on a copper pocket. Carbon 2016, 106, 279–283.

Crossref Google Scholar
20

Wang, Z. J.; Dong, J. C.; Li, L. F.; Dong, G. C.; Cui, Y.; Yang, Y.; Wei, W.; Blume, R.; Li, Q.; Wang, L. et al. The coalescence behavior of two-dimensional materials revealed by multiscale in situ imaging during chemical vapor deposition growth. ACS Nano 2020, 14, 1902–1918.

Crossref Google Scholar
21

Wang, G. L.; Wu, S.; Zhang, T. T.; Chen, P.; Lu, X. B.; Wang, S. P.; Wang, D. M.; Watanabe, K.; Taniguchi, T.; Shi, D. X. et al. Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching. Appl. Phys. Lett. 2016, 109, 053101.

Crossref Google Scholar
22

Shi, Z. W.; Yang, R.; Zhang, L. C.; Wang, Y.; Liu, D. H.; Shi, D. X.; Wang, E. G.; Zhang, G. Y. Patterning graphene with zigzag edges by self-aligned anisotropic etching. Adv. Mater. 2011, 23, 3061–3065.

Crossref Google Scholar
23

Dong, J. C.; Geng, D. C.; Liu, F. N.; Ding, F. Formation of twinned graphene polycrystals. Angew. Chem., Int. Ed. 2019, 58, 7723–7727.

Crossref Google Scholar
24

Ma, T.; Ren, W. C.; Zhang, X. Y.; Liu, Z. B.; Gao, Y.; Yin, L. C.; Ma, X. L.; Ding, F.; Cheng, H. M. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition. Proc. Natl. Acad. Sci. USA 2013, 110, 20386–20391.

Crossref Google Scholar
25

Liu, L.; Park, J.; Siegel, D. A.; McCarty, K. F.; Clark, K. W.; Deng, W.; Basile, L.; Idrobo, J. C.; Li, A. P.; Gu, G. Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges. Science 2014, 343, 163–167.

Crossref Google Scholar
26

Chen, X.; Yang, H.; Wu, B.; Wang, L. F.; Fu, Q.; Liu, Y. Q. Epitaxial growth of h-BN on templates of various dimensionalities in h-BN-graphene material systems. Adv. Mater. 2019, 31, 1805582.

Crossref Google Scholar
27

He, T.; Wang, Z.; Zhong, F.; Fang, H. H.; Wang, P.; Hu, W. D. Etching techniques in 2D materials. Adv. Mater. Technol. 2019, 4, 1900064.

Crossref Google Scholar
28

Yi, K. Y.; Liu, D. H.; Chen, X. S.; Yang, J.; Wei, D. P.; Liu, Y. Q.; Wei, D. C. Plasma-enhanced chemical vapor deposition of two-dimensional materials for applications. Acc. Chem. Res. 2021, 54, 1011–1022.

Crossref Google Scholar
29

Chaturvedi, A.; Chen, B.; Zhang, K. K.; He, Q. Y.; Nam, G. H.; You, L.; Lai, Z. C.; Tan, C. L.; Tran, T. H.; Liu, G. G. et al. A universal method for rapid and large-scale growth of layered crystals. SmartMat 2020, 1, e1011.

Crossref Google Scholar
30

Matsui, T.; Sato, H.; Kita, K.; Amend, A. E. B.; Fukuyama, H. Hexagonal nanopits with the zigzag edge state on graphite surfaces synthesized by hydrogen-plasma etching. J. Phys. Chem. C 2019, 123, 22665–22673.

Crossref Google Scholar
31

Wei, D. C.; Lu, Y. H.; Han, C.; Niu, T. C.; Chen, W.; Wee, A. T. S. Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices. Angew. Chem., Int. Ed. 2013, 52, 14121–14126.

Crossref Google Scholar
32

Cai, L.; Yu, G. Fabrication strategies of twisted bilayer graphenes and their unique properties. Adv. Mater. 2021, 33, 2004974.

Crossref Google Scholar
Nano Research
Volume 15 Issue 6,
June 2022
Pages 4909-4915
DOI: 10.1007/s12274-022-4193-x
Cite this article:
Li L, Dong J, Geng D, et al. Multi-stage anisotropic etching of two-dimensional heterostructures. Nano Research, 2022, 15(6): 4909-4915. https://doi.org/10.1007/s12274-022-4193-x
Topics:
Carbon
Metrics & Citations  
Article History
Copyright
Return