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Research Article

Multi-stage anisotropic etching of two-dimensional heterostructures

Lin Li1, Jichen Dong2, Dechao Geng3,4( ), Menghan Li1, Wei Fu5, Feng Ding4, Wenping Hu4, Hui Ying Yang3( )
Institute of Molecular Plus, Tianjin University, Tianjin 300072, China
Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, Republic of Korea
Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore 487372, Singapore
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A* STAR), Singapore 138634, Singapore
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An erratum to this article is available online at:
https://doi.org/10.1007/s12274-022-4387-2

Graphical Abstract

Novel etching mode entitled as multi-stage etching has been demonstrated onto the two-dimensional(2D) heterostructures on liquid Cu surface by chemical vapor deposition method. With aid of themulti-stage etching process, formation of 2D heterostructures arrays with controlled size andmorphology has been realized.

Abstract

Regarding the reverse process of materials growth, etching has been widely concerned to indirectly probe the growth kinetics, offering an avenue in governing the growth of two-dimensional (2D) materials. In this work, interface-driven anisotropic etching mode is demonstrated for the first time to be generally applied to 2D heterostructures. It is shown that the typical in-plane graphene and hexagonal boron nitride (h-BN) heterostructures follow a multi-stage etching behavior initiated first along the interfacial region between the two materials and then along edges of neighboring h-BN flakes and finally along central edges of h-BN. By accurately tuning etching conditions in the chemical vapor deposition process, series of etched 2D heterostructure patterns are controllably produced. Furthermore, scaled formation of graphene and h-BN heterostructures arrays has been realized with full assist of as-proposed etching mechanism, offering a direct top-down method to make 2D orientated heterostructures with order and complexity. Detection of interface-driven multi-staged anisotropic etching mode will shed light on understanding growth mechanism and further expanding wide applications of 2D heterostructures.

Keywords

anisotropic etchingtwo-dimensional materialsheterostructuresgrapheneh-BN

Electronic Supplementary Material

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Nano Research
Volume 15 Issue 6,
June 2022
Pages 4909-4915
DOI: 10.1007/s12274-022-4193-x
Cite this article:
Li L, Dong J, Geng D, et al. Multi-stage anisotropic etching of two-dimensional heterostructures. Nano Research, 2022, 15(6): 4909-4915. https://doi.org/10.1007/s12274-022-4193-x
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Received: 14 December 2021
Revised: 17 January 2022
Accepted: 24 January 2022
Published: 01 April 2022
© Tsinghua University Press 2022
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