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Research Article

High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

Yoonsok Kim, Taeyoung Kim, Eun Kyu Kim( )
Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, Republic of Korea
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Graphical Abstract

Interface modulation of molybdenum disulfide (MoS2) with heterojunction field-effect transistor structure could surprisingly improve electrical performances of the devices.

Abstract

Molybdenum disulfide (MoS2), one of transition metal dichalcogenides, is a promising semiconductor material for electronic or optoelectronic devices due to its favorably electronic properties. However, in metal-oxide semiconductor field-effect transistor (MOSFET) structures using MoS2, electrical performances such as mobility and subthreshold swing are suppressed by the interface trap density between the channel and dielectric layers. Moreover, the electrical stability of such structures is compromised due to interface traps and that can be analyzed such as current hysteresis and transient characteristics. Here, we demonstrate MoS2 heterojunction field-effect transistors (HFET) by applying MoS2/p+-Si heterojunctions and achieve high performance characteristics, including a mobility of 636.19 cm2/(V∙s), a subthreshold swing of 67.4 mV/dec, minimal hysteresis of 0.05 V, and minimized transient characteristics. However, the HFET devices with varying the channel length demonstrated degradation of electrical performance with increasing the overlap area of the channel and dielectric layers. These results regarding MoS2/p+-Si HFETs resulted in the structural optimization of high-performance electronic devices for practical applications.

Keywords

molybdenum disulfide (MoS2) transition metal dichalcogenidejunction field-effect transistordielectric layerinterface trap

Electronic Supplementary Material

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Nano Research
Volume 15 Issue 7,
July 2022
Pages 6500-6506
DOI: 10.1007/s12274-022-4263-0
Cite this article:
Kim Y, Kim T, Kim EK. High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation. Nano Research, 2022, 15(7): 6500-6506. https://doi.org/10.1007/s12274-022-4263-0
Topics:
Field effect transistors

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Received: 19 December 2021
Revised: 04 February 2022
Accepted: 21 February 2022
Published: 30 April 2022
© Tsinghua University Press 2022
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