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Research Article

Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit

Zhe Sheng1, Yue Wang1, Wennan Hu1, Haoran Sun1, Jianguo Dong1, Rui Yu1, David Wei Zhang1,2, Peng Zhou1,2( ), Zengxing Zhang1,2( )
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
National Integrated Circuit Innovation Center, Shanghai 201203, China
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Graphical Abstract

Based on complementary back-to-back BP/h-BN/graphene heterostructured gate-programmable PN junctions, a reconfigurable rectifier circuit is successfully fabricated to process alternating current (AC) signals with the reconfiguration time less than 25 μs and AC signal frequency prior 1 KHz. The design is like complementary metal-oxide-semiconductor (CMOS) configuration and should be beneficial for voltage output, static power consumption, and large-scale integration.

Abstract

The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications, e.g., PN junctions for rectifier circuits. However, current-reported rectifier circuits usually consist of one gate-programmable PN junction as the rectifier and one resistor as the load, which are not conductive to voltage output and large-scale integration. Here we propose an approach of complementary gate-programmable PN junctions to assemble reconfigurable rectifier circuit, which include two symmetric back-to-back black phosphorus (BP)/hexagonal boron nitride (h-BN)/graphene heterostructured semi-gate field-effect transistors (FETs) and perform complementary NP and PN junction like complementary metal-oxide-semiconductor (CMOS) circuit. The investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability, and can process alternating current (AC) signals with the frequency prior 1 KHz and reconfiguration speed up to 25 μs. We also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs configuration. The complementary configuration here should be of low output impedance and low static power consumption, being beneficial for effective voltage output and large-scale integration.

Keywords

two-dimensional (2D) materialPN junctionrectifier circuitcomplementary configuration

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Nano Research
Volume 16 Issue 1,
January 2023
Pages 1252-1258
DOI: 10.1007/s12274-022-4724-5
Cite this article:
Sheng Z, Wang Y, Hu W, et al. Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit. Nano Research, 2023, 16(1): 1252-1258. https://doi.org/10.1007/s12274-022-4724-5
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Thin film circuits

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Received: 10 June 2022
Revised: 01 July 2022
Accepted: 01 July 2022
Published: 11 August 2022
© Tsinghua University Press 2022
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