The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications, e.g., PN junctions for rectifier circuits. However, current-reported rectifier circuits usually consist of one gate-programmable PN junction as the rectifier and one resistor as the load, which are not conductive to voltage output and large-scale integration. Here we propose an approach of complementary gate-programmable PN junctions to assemble reconfigurable rectifier circuit, which include two symmetric back-to-back black phosphorus (BP)/hexagonal boron nitride (h-BN)/graphene heterostructured semi-gate field-effect transistors (FETs) and perform complementary NP and PN junction like complementary metal-oxide-semiconductor (CMOS) circuit. The investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability, and can process alternating current (AC) signals with the frequency prior 1 KHz and reconfiguration speed up to 25 μs. We also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs configuration. The complementary configuration here should be of low output impedance and low static power consumption, being beneficial for effective voltage output and large-scale integration.

Since Moore’s law in the traditional semiconductor industry is facing shocks, More Moore and More than Moore are proposed as two paths to maintain the development of the semiconductor industry by adopting new architectures or new materials, in which the former is committed to the continued scaling of transistors for performance enhancement, and the latter pursues the realization of functional diversification of electronic systems. Two-dimensional (2D) materials are supposed to play an important role in these two paths. In More Moore, the ultimate thin thickness and the dangling-bond-free surface of 2D channels offer excellent gate electrostatics while avoiding the degradation of carrier mobility at the same time, so that the transistors can be further scaled down for higher performance. In More than Moore, devices based on 2D materials can well meet the requirements of electronic systems for functional diversity, like that they can operate at high frequency, exhibit excellent sensitivity to the changes in the surroundings at room temperature, have good mechanical flexibility, and so on. In this review, we present the application of 2D materials in More Moore and More than Moore domains of electronics, outlining their potential as a technological option for logic electronics, memory electronics, radio-frequency electronics, sensing electronics, and flexible electronics.