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Research Article

All-inorganic transparent Hf0.85Ce0.15O2 ferroelectric thin films with high flexibility and stability

Sheng-Tao Mo1,2,3,§, Kai-Ming Feng1,2,3,§, Jing-Lin Pang1,2,3, Kuo Ouyang1,2,3, Li-Mei Jiang1,2,3, Qiong Yang1,2,3( ), Biao Zhang1,2,3( ), Jie Jiang1,2,3( )
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Hunan Provincial Key Laboratory of Thin Film Materials and Devices, Xiangtan University, Xiangtan 411105, China
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Xiangtan 411105, China

§ Sheng-Tao Mo and Kai-Ming Feng contributed equally to this work.

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Graphical Abstract

Transparent Ce-doped hafnium oxide ferroelectric thin films were manufactured by chemical solution deposition on mica substrates with indium tin oxide (ITO) thin films as the bottom electrodes, which present excellent ferroelectric performance even under bending states.

Abstract

Electronic devices that are transparent and flexible have a wide range of applications in the domains of vital sign parameter monitoring, health management, and so on. Ferroelectric memory is a revolutionary nonvolatile memory that is ideal for data storage and processing in transparent flexible electronic systems. In this study, Ce-doped hafnium oxide ferroelectric thin film is manufactured on mica substrate by the chemical solution deposition with transparent indium tin oxide (ITO) thin films as the bottom electrodes. The transmittance of mica/ITO/Hf0.85Ce0.15O2 thin film is over 80%. The 2Pr of the transparent flexible Hf0.85Ce0.15O2 ferroelectric thin film is increased by about 22.4% and the Ec is reduced by 26.7% compared with those of Hf0.85Ce0.15O2 ferroelectric thin film grown on p+-Si substrate. The transparent flexible Hf0.85Ce0.15O2 ferroelectric thin film can remain keeping good quality when being bent under ±2.5 mm bending radius. Additionally, degradation of polarization, retention, and endurance performance was not obvious even at a bending radius of 5.0 mm after 104 bending cycles. This research provides a new strategy and an important experimental basis for the development and implementation of transparent flexible ferroelectric memories.

Keywords

flexible Hf0.85Ce0.15O2 thin filmstransparent thin filmsferroelectric properties

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Nano Research
Volume 16 Issue 4,
April 2023
Pages 5065-5072
DOI: 10.1007/s12274-022-5074-z
Cite this article:
Mo S-T, Feng K-M, Pang J-L, et al. All-inorganic transparent Hf0.85Ce0.15O2 ferroelectric thin films with high flexibility and stability. Nano Research, 2023, 16(4): 5065-5072. https://doi.org/10.1007/s12274-022-5074-z
Topics:
Hafnium compounds

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Received: 07 July 2022
Revised: 08 September 2022
Accepted: 19 September 2022
Published: 19 October 2022
© Tsinghua University Press 2022
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