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Flexible and wake-up free Hf0.5Zr0.5O2 ferroelectric thin films with ultra-low operation voltage and high polarization
Journal of Advanced Ceramics 2024, 13(11): 1844-1851
Published: 28 November 2024
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Flexible and transparent hafnium oxide-based ferroelectric films are attracting widespread attention because of the increasing demand for wearable electronic devices. However, the ultra-low voltage operation with robust and stable ferroelectricity, which is a prerequisite for portable device applications, has not been realized simultaneously. Here, we report flexible Hf0.5Zr0.5O2 ferroelectric films with a saturation voltage of only 1.3/3 V and remanent polarization (2Pr) of 38/60 µC·cm2. Negligible wake-up effect and superior stability resistance to compressive/tensile stress and high temperature up to 150 °C are also demonstrated. The polarization switching dynamics under bending are investigated based on the switching current measurement, suggesting that the intrinsic switching speeds keep almost constant at different bending radii. In addition, there is a negative correlation between the activation field and the compressive or tensile stress, which is due to the lowered energy barrier induced by the in-plane strain applied to the [111]-oriented hexagonal cell. Our work sheds light on the application of flexible, stable, and HfO2-based ferroelectric thin films with ultra-low consumption.

Research Article Issue
All-inorganic transparent Hf0.85Ce0.15O2 ferroelectric thin films with high flexibility and stability
Nano Research 2023, 16(4): 5065-5072
Published: 19 October 2022
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Electronic devices that are transparent and flexible have a wide range of applications in the domains of vital sign parameter monitoring, health management, and so on. Ferroelectric memory is a revolutionary nonvolatile memory that is ideal for data storage and processing in transparent flexible electronic systems. In this study, Ce-doped hafnium oxide ferroelectric thin film is manufactured on mica substrate by the chemical solution deposition with transparent indium tin oxide (ITO) thin films as the bottom electrodes. The transmittance of mica/ITO/Hf0.85Ce0.15O2 thin film is over 80%. The 2Pr of the transparent flexible Hf0.85Ce0.15O2 ferroelectric thin film is increased by about 22.4% and the Ec is reduced by 26.7% compared with those of Hf0.85Ce0.15O2 ferroelectric thin film grown on p+-Si substrate. The transparent flexible Hf0.85Ce0.15O2 ferroelectric thin film can remain keeping good quality when being bent under ±2.5 mm bending radius. Additionally, degradation of polarization, retention, and endurance performance was not obvious even at a bending radius of 5.0 mm after 104 bending cycles. This research provides a new strategy and an important experimental basis for the development and implementation of transparent flexible ferroelectric memories.

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