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Review Article

Silicon-processes-compatible contact engineering for two-dimensional materials integrated circuits

Li Gao1,2, Zhangyi Chen1, Chao Chen1, Xiankun Zhang1,3( ), Zheng Zhang1,3( ), Yue Zhang1,2,3( )
Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
School of Materials Science and Engineering, Peking University, Beijing 100871, China
Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, University of Science and Technology Beijing, Beijing 100083, China
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Graphical Abstract

This article provides a systematic overview of the contact engineering of two-dimensional semiconductor materials compatible with silicon based processes for practical application in integrated circuits.

Abstract

Two-dimensional (2D) semiconductors, especially transition metal dichalcogenides (TMDCs), have been proven to be excellent channel materials for the next-generation integrated circuit (IC). However, the contact problem between 2D TMDCs and metal electrodes has always been one of the main factors restricting their development. In this review, we summarized recent work on 2D TMDCs contact from the perspective of compatible integration with silicon processes and practical application requirements, including the contact performance evaluation indicators, special challenges encountered in 2D TMDCs, and recent optimization methods. Specifically, we sorted out and highlighted the performance indicators of 2D TMDCs contacts, including contact resistance (RC), contact scaling, contact stability, and contact electrical/thermal conductivity. Special challenges of 2D TMDCs and metal contact, such as severe Fermi level pinning, large RC, and difficult doping, are systematically discussed. Furthermore, typical methods for optimizing 2D TMDCs RC, edge contact strategies for scaling contact lengths, and solutions for improving contact stability are reviewed. Based on the current research and problems, the development direction of 2D TMDCs contacts that meet the silicon-based compatible process and application performance requirements is proposed.

Keywords

two-dimensional (2D) semiconductorstransition metal dichalcogenidesfield effect transistorscontact engineering

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Nano Research
Volume 16 Issue 11,
November 2023
Pages 12471-12490
DOI: 10.1007/s12274-023-6167-z
Cite this article:
Gao L, Chen Z, Chen C, et al. Silicon-processes-compatible contact engineering for two-dimensional materials integrated circuits. Nano Research, 2023, 16(11): 12471-12490. https://doi.org/10.1007/s12274-023-6167-z
Topics:
CMOS integrated circuitsField effect transistorsThin film circuits

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Received: 11 August 2023
Revised: 04 September 2023
Accepted: 04 September 2023
Published: 27 October 2023
© Tsinghua University Press 2023
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